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  524 288-bit Datasheet PDF File

For 524 288-bit Found Datasheets File :: 1668    Search Time::2.86ms    
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    V29C31004B V29C31004T

Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C31004B V29C31004T
OCR Text 524,288 x 8 BIT) 3.3 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 90, 120 ns Single 3.3V 0.3 Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K...
Description 4 MEGABIT 524,288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY
4 MEGABIT 524/288 x 8 BIT 3.3 VOLT CMOS FLASH MEMORY

File Size 66.98K  /  15 Page

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    V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T

Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51004B V29C51004T V29C51004T-70J V29C51004T-70T V29C51004T-90T V29C51004B-70J V29C51004B-70T
OCR Text 524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90 ns Single 5V 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K byte...
Description x8 Flash EEPROM x8闪存EEPROM
4 MEGABIT 524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 66.57K  /  15 Page

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    V29C51400B V29C51400T

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V29C51400B V29C51400T
OCR Text 524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 256K x 16-bit or 512K x 8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V 10% Power Supply Sector Erase Mode Operation 16KB Boot ...
Description 4 MEGABIT 262,144 x 16 BIT/524,288 x 8 BIT 5 VOLT CMOS FLASH MEMORY

File Size 68.28K  /  16 Page

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    V54C316162VC-6 V54C316162VC V54C316162VC-5 V54C316162VC-55 V54C316162VC-7

Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Part No. V54C316162VC-6 V54C316162VC V54C316162VC-5 V54C316162VC-55 V54C316162VC-7
OCR Text ...data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the ...
Description 200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16

File Size 154.41K  /  22 Page

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    VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161BT-7 VG3617161BT-8

ETC[ETC]
Part No. VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161BT-7 VG3617161BT-8
OCR Text ...ronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern ...
Description 16Mb CMOS Synchronous Dynamic RAM

File Size 1,592.73K  /  69 Page

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    VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161DT-7 VG3617161DT-8

VML[Vanguard International Semiconductor]
Part No. VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161DT-7 VG3617161DT-8
OCR Text ...ronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern ...
Description 16Mb CMOS Synchronous Dynamic RAM

File Size 940.00K  /  70 Page

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    VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8

VML[Vanguard International Semiconductor]
Part No. VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text ...ronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V power supply. This SDRAM is delicately designed with performance concern ...
Description CMOS Synchronous Dynamic RAM

File Size 1,124.02K  /  69 Page

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    A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29

AMICC[AMIC Technology]
Part No. A29L004TL-90 A29L004L A29L004TV-90 A29L004X A29L004 A29L004TL-70 A29L004TV-70 A29L004TW-70 A29L004TW-90 A29L004TX-70 A29L004TX-90 A29L004UL-70 A29L004UL-90 A29L004UV-70 A29L004UV-90 A29L004UW-70 A29L004UW-90 A29L004UX-70 A29L004UX-90 A29L004V A29L004W
OCR Text ...-only Flash memory organized as 524,288 bytes of 8 bits. The 8 bits of data appear on I/O0 - I/O7. The A29L004 is offered in 40-pin TSOP, 32-pin PLCC or (s)TSOP packages. This device is designed to be programmed in-system with the standard ...
Description 512K X 8 Bit CMOS 3.0 Volt-only/ Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
512K X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory

File Size 367.91K  /  39 Page

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    K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V62C5181024LL-70P K4S643232C K4S643232C-TC10 K4S643232C-TC55 K4S643232C-TC60 K4S643232C-TC80 K4S643232C-TL10 K4S643232C-TL60 K4S643232C-TL80 K4S643232C-TC_L10 K4S643232C-TC_L55 K4S643232C-TC_L60 K4S643232C-TC_L70 K4S643232C-TC_L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC/L80
OCR Text ...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,151.85K  /  43 Page

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    K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
OCR Text ...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 100.95K  /  12 Page

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