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5.175mhz Datasheet PDF File

For 5.175mhz Found Datasheets File :: 411 Search Time::1.89ms
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				STMicroelectronics
Part No.	SD2931-1003
OCR Text	... . . . . . . . . . . . 4 3 4 5 6 7 8 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...175MHz Tc =-20 C Tc =+25 C Tc =+80 C f= 175MHz Idq= 250mA 20 25 Pin, INPUT POWER (W) ...
Description	RF power transistors HF/VHF/UHF N-channel MOSFETs
File Size	312.68K / 16 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	RA30H1317M RA30H1317M-01 RA30H1317M-E01
OCR Text	... MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the...175MHz * Low-Power Control Current IGG=1mA (typ) at VGG=5V * Module Size: 66 x 21 x 9.88 mm * Linear...
Description	135-175MHz 30W 12.5V MOBILE RADIO
File Size	63.63K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text	...G=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and contr...175MHz, ZG=ZL=50 The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS...
Description	Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA 135-175MHz 8W 9.6V PORTABLE RADIO
File Size	61.86K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS1 RD07MVS111
OCR Text	5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):ce...175mhz,520mhz,7w description rd07mvs1 is a mos fet type transistor specifically designed for v hf /u...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	422.30K / 10 Page	View it Online	Download Datasheet

				MAXIM[Maxim Integrated Products]
Part No.	MAX12554 MAX12555 MAX12555ETL MAX19538 MAX1206 MAX1207 MAX1208 MAX1209 MAX1211 MAX12553
OCR Text	...ta Latency Figure 6 8.0 fCLK 95 5 MHz MHz Clock cycles dBFS CPAR CSAMPLE Fixed capacitance to ground Switched capacitance VDIFF Differential...175MHz at -0.5dBFS (Notes 3, 4) fIN = 3MHz at -0.5dBFS (Notes 3, 4) Signal-to-Noise and Distortion S...
Description	14-Bit, 95Msps, 3.3V ADC
File Size	759.37K / 28 Page	View it Online	Download Datasheet

				Maxim
Part No.	MAX12554
OCR Text	...ta Latency Figure 6 8.0 fCLK 80 5 MHz MHz Clock cycles dBFS CPAR CSAMPLE Fixed capacitance to ground Switched capacitance VDIFF Differential...175MHz at -0.5dBFS (Note 5) fIN = 3MHz at -0.5dBFS (Note 5) Signal-to-Noise and Distortion SINAD fIN...
Description	14-Bit, 80Msps, 3.3V ADC From old datasheet system
File Size	1,004.32K / 28 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS1B RD07MVS1B10
OCR Text	...-0.05 1.0+/-0.05 (0.25) 2 3 1 3.5+/-0.05 2.0+/-0.05 (0.25) (0.22) (0.22) description rd07mvs1b is a mos fet type transistor ...175mhz) high efficiency: 55%typ. (520mhz) application for output stage of high power amplifi...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	205.51K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric
Part No.	RD07MVS1
OCR Text	... e h RATINGS 30 +/- 20 50 1.5 3 150 -40 to +125 2.5 t e U 4 C C C/W 0.2+/-0.05 0.9+/-0.1 .c Terminal No. 1.Drain (out...175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(PinContro...
Description	Silicon MOSFET Power Transistor
File Size	241.52K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS1B11
OCR Text	5 0 . 9 + / - 0 . 1 index mark (gate) 6.0+/-0.15 4 . 9 + / - 0 . 1 5 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):ce...175mhz,520mhz,7w description rd07mvs1b is a mos fet type transistor specifically designed for v hf /...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	415.52K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS110
OCR Text	...-0.05 1.0+/-0.05 (0.25) 2 3 1 3.5+/-0.05 2.0+/-0.05 (0.25) (0.22) (0.22) description rd07mvs1 is a mos fet type transistor ...175mhz) high efficiency: 55%typ. (520mhz) application for output stage of high power amplifi...
Description	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	212.23K / 10 Page	View it Online	Download Datasheet

For 5.175mhz Found Datasheets File :: 411 Search Time::1.89ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |