40-80v pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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40-80v Datasheet PDF File

For 40-80v Found Datasheets File :: 6042 Search Time::2.656ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FM400TU-3A
OCR Text	...20 200 400 200 200 400 650 880 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Unit V V A A A A A W W C C V Nm Nm g Main terminal to...80V, ID = 200A, VGS = 15V Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- ...
Description	HIGH POWER SWITCHING USE INSULATED PACKAGE
File Size	105.21K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FM600TU-3A FM600TU-07A
OCR Text	...0 300 600 300 300 600 960 1300 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Unit V V A A A A A W W C C V Nm Nm g Main terminal to...80V, ID = 300A, VGS = 15V Conditions Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- ...
Description	HIGH POWER SWITCHING USE INSULATED PACKAGE
File Size	105.03K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQH90N10V2
OCR Text	... Min. -0.24 -- Max. 0.45 -40 Unit C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQH9...80V, TC = 150C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 52.5A V...
Description	100V N-Channel MOSFET
File Size	961.95K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP3710PBF IRFP3710PBF-15
OCR Text	...ue, 6-32 or M3 srew Max. 57 40 180 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ...80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 V GS = -20V 190 ID = 28A 26 nC V DS = 80V 82 V GS = ...
Description	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025Ω , ID = 57A ) HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025ヘ , ID = 57A ) ADVANCED PROCESS TECHNOLOGY
File Size	227.59K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHE9130
OCR Text	...he last page -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i table 2. single event effect safe operating area ion let energy ...80v ds 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds ( on ) sin g le...
Description	(IRHE9130 / IRHE93130) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
File Size	146.17K / 8 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	ZVN4210A
OCR Text	...ce output capacitance (2) c oss 40 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 12 pf turn-on delay time (2)(3) t d...80v 2v 2.5v 3.5v 5v 600 700 900 800 1000 zvn4210a 3-389 n-channel enhancement mode vertical dmos ...
Description	N-channel MOSFET
File Size	68.11K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP55T10GH-HF14
OCR Text	...uous drain current, v gs @ 10v 40 pulsed drain current 1 160 total power dissipation 125 -55 to 175 total power dissipation 2 operating jun...80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate...
Description	Simple Drive Requirement
File Size	54.64K / 4 Page	View it Online	Download Datasheet

				Zetex Semiconductors
Part No.	ZVN4210G
OCR Text	...ce output capacitance (2) c oss 40 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 12 pf turn-on delay time (2)(3) t d...80v 2v 2.5v 3.5v 5v 600 700 900 800 1000 zvn4210g d d s g drain-source diode characteristics para...
Description	N-channel MOSFET
File Size	64.77K / 3 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSB044N08NN3G
OCR Text	...r thja =58 3) k/w 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6cm2 (o ne layer, 70 m thick) cop per area for drain connection. ...80v, v gs =0 v, t j =25 c - 10 100 v ds =80 v, v gs =0 v, t j =125 c gate-source leakage current...
Description	n-Channel Power MOSFET
File Size	1,458.38K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7473TR
OCR Text	...1 12 0.5 0.01 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temp...80V VDS = 50V VDS = 20V VGS , Gate-to-Source Voltage (V) 16 10000 C, Capacitance(pF) ...
Description	100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	200.40K / 8 Page	View it Online	Download Datasheet

For 40-80v Found Datasheets File :: 6042 Search Time::2.656ms
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