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  4.75.187 Datasheet PDF File

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    APT8014JLL

Advanced Power Technology
Part No. APT8014JLL
OCR Text ...DV NF A I 800 42 168 30 40 595 4.76 300 42 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3200 STAT...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.73K  /  2 Page

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...0 700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Sourc...75 275 22 20 97 15 17650 2050 1190 1035 110 410 44 40 145 30 ns nC Gate-Source Charge Gate-Dr...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ...0 700 5.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...75 275 22 20 97 15 17650 2050 1190 1035 110 410 44 40 145 30 ns nC pF Gate-Source Charge Gate...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ... IGSS VGS(TH) 250 1000 100 2 4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use...75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON),...
Description POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ...ts Amps 800 33 142 30 40 520 4.16 -55 to 150 300 33 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...DV NF A I 800 33 142 30 40 520 4.16 300 33 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000 STAT...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    APT8024JFLL

ADPOW[Advanced Power Technology]
Part No. APT8024JFLL
OCR Text ... 460 3.68 -55 to 150 300 29 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.21K  /  2 Page

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    APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL

ADPOW[Advanced Power Technology]
Part No. APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text ...petitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDS...75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.72K  /  2 Page

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    APT8028JVR APT5010JVR

ADPOW[Advanced Power Technology]
Part No. APT8028JVR APT5010JVR
OCR Text ...ts Amps 800 28 112 30 40 500 4 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissip...75 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Tur...
Description POWER MOS V 800V 28A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 71.26K  /  4 Page

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    APT8030JN APT8035JN

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030JN APT8035JN
OCR Text ...ER MOSFETS 800 27 108 30 520 4.16 800 25 100 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Pow...75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON),...
Description POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS V 800V 27.0A 0.30/0.35 Ohm

File Size 61.59K  /  4 Page

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