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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...- -- -- 1.7 3.6 5.7 7.9 1.5 0.1 250 500 600 60 70 10 -- -- -- -- -- A -- V A V V Test Conditions VDD = 5V VDD = 10V VDD = 15V VDD = 20V ...200 Turn-On Delay Time (ns) Turn-On Delay Time (ns) 200 Max. 150 Max. 150 Typ. 100 ...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ...- -- -- 1.7 3.6 5.7 7.9 1.5 0.1 250 500 600 60 70 10 -- -- -- -- -- A -- V A V V Test Conditions VDD = 5V VDD = 10V VDD = 15V VDD = 20V ...200 Turn-On Delay Time (ns) Turn-On Delay Time (ns) 200 Max. 150 Max. 150 Typ. 100 ...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ... IR2110(S)/IR2113(S) & (PbF) 250 250 200 Turn-On Delay Time (ns) Turn-On Delay Time (ns) 200 Max. 150 Max. 150 Typ. 100 Typ. 100 50 50 0 -50 -25 0 25 50 75 100 125 Temperature (C) 0 10 12 14 16 18...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... = 50A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 nC VDS = 48V 44 VGS = 10...200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Ava...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... = 50A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 50A 28 nC VDS = 48V 44 VGS = 10...200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Ava...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10...200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10...200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...4 18 150 36 92 4.5 7.5 2840 420 250 1630 360 560 --- --- 7.5 4.0 --- 20 250 200 -200 95 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... 15 114 28 19 4.5 7.5 2900 1100 250 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.009 VGS = 10V, ...200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V (B R )D S S tp ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...= 104A 20 VDS = 20V, VGS = 0V A 250 VDS = 16V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 120 ID = 104A 27 nC VDS = 16V 46 VGS = 10V --- VDD = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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