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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800DCM17-A000
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| OCR Text |
...00V to 3300V and currents up to 2400a. The DIM800DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short cir... |
| Description |
IGBT Chopper Module
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| File Size |
170.01K /
10 Page |
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it Online |
Download Datasheet
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800NSM33-A000
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| OCR Text |
...00V to 3300V and currents up to 2400a. The DIM800NSM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s sh... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
173.83K /
10 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP1600FSM12
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| OCR Text |
...00V to 3300V and currents up to 2400a. The GP1600FSM12 is a singlel switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability... |
| Description |
Single Switch IGBT Module Advance Information
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| File Size |
138.70K /
10 Page |
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it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MHS18
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| OCR Text |
...= 200A, VR = 50% VCES, dIF/dt = 2400a/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 200 50 450 90 60 50 Max. 650 300 120 600 120 80 80 Units ns ns mJ ns ns mJ C
Tcase = 125C unless stated... |
| Description |
Half Bridge IGBT Module
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| File Size |
135.14K /
10 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MKS12
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| OCR Text |
...00V to 3300V and currents up to 2400a. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module incoporates high curren... |
| Description |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
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| File Size |
126.08K /
10 Page |
View
it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP200MLS12
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| OCR Text |
...00V to 3300V and currents up to 2400a. The GP200MLS12 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The module incoporates high curren... |
| Description |
IGBT Chopper Module Preliminary Information
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| File Size |
126.55K /
10 Page |
View
it Online |
Download Datasheet |
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DYNEX[Dynex Semiconductor]
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| Part No. |
GP350MHB06S
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| OCR Text |
...00V to 3300V and currents up to 2400a. The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and... |
| Description |
Half Bridge IGBT Module
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| File Size |
125.80K /
10 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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