20v 0.25a pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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20v 0.25a Datasheet PDF File

For 20v 0.25a Found Datasheets File :: 2641 Search Time::2.219ms
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				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
Part No.	FS50SM-3
OCR Text	...itions ID = 1mA, VGS = 0V VGS = 20v, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS...0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 -- 130 Max. -- ...
Description	Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	45.24K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FGW25N120vD
OCR Text	...rrent i ges v ce = 0v, v ge = 20v - - 200 na gate-emitter threshold voltage v ge (th) v ce = +20v, i c = 25ma 6.0 6.5 7.0 v collector-emitter saturation voltage v ce (sat) v ge = +15v, i c = 25a t j =25c - 1.85 2.4 v t j =175c - 2.4 -...
Description	Discrete IGBT (High-Speed V series) 1200V / 25A
File Size	493.75K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MF
OCR Text	...g. 13 IC = 25A, TJ = 150C VGE = 20v Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eo...0 112 420 250 160 Max. Units Conditions 100 IC = 39A 25 nC VCC = 400V 67 See Fig. 8 -- TJ = 25C -- n...
Description	IGBT SIP MODULE Fast IGBT
File Size	398.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MK
OCR Text	..., T J = 150C -- -- 500 nA VGE = 20v Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf E...0 112 420 250 160 Max. Units Conditions 200 IC = 30A 42 nC VCC = 400V 73 -- TJ = 25C -- ns IC = 30A,...
Description	IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
File Size	76.58K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MM
OCR Text	..., T J = 150C -- -- 500 nA VGE = 20v Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf E...0 6.1 -- 80 110 610 440 9.4 2900 230 30 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 180 IC ...
Description	IGBT SIP MODULE Short Circuit Rated Fast IGBT
File Size	78.17K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPU165MU
OCR Text	..., T J = 150C -- -- 500 nA VGE = 20v Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf E...0.76 0.26 1.0 24 27 180 130 3.7 2900 330 41 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 140...
Description	IGBT SIP MODULE Ultra-Fast IGBT
File Size	398.85K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IGW25T12009
OCR Text	...urrent i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =25a - 16 - s integrated gate resistor r gint...0.197 in.) from case l e - 13 - nh short circuit collector current 1) i c(sc) v ge =15v,...
Description	Low Loss IGBT in TrenchStop? and Fieldstop technology
File Size	348.33K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKW20N60T IKP20N60T IKB20N60T
OCR Text	... C E = 0V ,V G E = 2 0V V C E = 20v, I C = 20A 11 40 1000 100 nA S 4.1 1.65 1.6 4.9 2.05 5.7 A 1.5 1.9 2.05 600 V Symbol Conditions Value min. Typ. max. Unit 62 40 40 1.5 0.9 K/W Symbol Conditions Max. Value Unit Power Semiconductors ...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft/fast recovery anti-parallel EmCon HE diode IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode
File Size	431.57K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU2407 IRFR2407
OCR Text	...S = 0V, TJ = 150C --- 200 VGS = 20v nA --- -200 VGS = -20v 74 110 ID = 25A 13 19 nC VDS = 60V 22 34 VGS = 10V 16 --- VDD = 38V 90 --- ID = 2...0.25in.) nH G from package 7.5 --- and center of die contact S 2400 --- VGS = 0V 340 --- pF VDS = 25...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A? Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A) HEXFET? Power MOSFET Power MOSFET(Vdss=75V Rds(on)=0.026ohm Id=42A) Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?)
File Size	125.42K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PSMN4R3-100ES PSMN4R3-100ES-15
OCR Text	...gss gate leakage current v gs =-20v; v ds =0v; t j = 25 c - 10 100 na v gs =20v; v ds =0v; t j = 25 c - 10 100 na r dson drain-source on-sta...0.9 - ? dynamic characteristics q g(tot) total gate charge i d =75a; v ds =50v; v gs =10v; see fig...
Description	N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
File Size	198.63K / 14 Page	View it Online	Download Datasheet

For 20v 0.25a Found Datasheets File :: 2641 Search Time::2.219ms
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