| |
|
 |
KEC[KEC(Korea Electronics)]
|
| Part No. |
KTC3266
|
| OCR Text |
...E(sat) VBE fT Cob GR:200 400
2000. 11. 30
Revision No : 0
1/2
KTC3266
I C - VCE
COLLECTOR CURRENT I C (mA) 2000 1600 1200 80...0m s*
s*
0.3
1
3
10
3
VCEO MAX.
SINGLE NONREPETITIVE PULSE Ta=25 C * PULSE W... |
| Description |
EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING)
|
| File Size |
72.22K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
KSB1023 KSB1023TU
|
| OCR Text |
...B2 = - 6mA RL = 10 0.3 0.6 0.25 2000 1000 - 1.5 -2 V V s s s Min. - 40 Typ. Max. - 20 - 2.5 Units V A mA
(c)2000 Fairchild Semiconductor ...0m S
20
1
16
12
8
VCEOMAX
4
0.1 1 10
0 0 50
o
100
150
VCE[V], C... |
| Description |
PNP Silicon Darlington Transistor
PNP Epitaxial Silicon Transistor
Power Amplifier Applications
|
| File Size |
45.26K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
KSB1022 KSB1022TU
|
| OCR Text |
... 3A IB1 = - IB2 = - 6mA RL = 15 2000 1000 - 0.95 - 1.3 - 1.55 0.8 2 2.5 Min. - 60 Typ. Max. - 100 -4 15000 - 1.5 -2 - 2.5 V V V s s s Units ...0m
mS
30
10
1m S
s
0u S
25
20
15
-0.1
10
VCEOMAX
5
-0.01 -1 ... |
| Description |
High Power Switching Applications
PNP Silicon Darlington Transistor
PNP Epitaxial Silicon Transistor
|
| File Size |
46.78K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
KSB1017 KSB1017YTU
|
| OCR Text |
...80 O 70 ~ 140 Y 120 ~ 240
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB1017
Typical Characteristics
-...0m 10
1s
C D
10ms
20
15
-1
10
VCEO MAX.
5
-0.1 -1 -10 -100
0 0 25 50
o... |
| Description |
Power Amplifier Applications
Power Amplifier Applications Complement to KSD1408
|
| File Size |
50.25K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO[Sanyo Semicon Device]
|
| Part No. |
CPH3004
|
| OCR Text |
...00 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.947 0.889 0.761 0.661 0.596 0.552 0.529 0.513 0.500 0.490 0.487 0.484 0.480 0.479 0.479 0.479 S11 --22.81 --43.79 --79.18 --105.75 --127.22 --145.54 --160.90 --175.26 170.66 15... |
| Description |
Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications
|
| File Size |
38.38K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| Part No. |
2SH17
|
| OCR Text |
...----------
ton tf -- -- -- 150 2000 2300 -- -- --
tr
--
75
--
ns
-------------------------------- -----------------------...0m =1 ot) sh
20
0.1 Ta = 25 C
0.01 0 50 100 Case Temperature 150 Tc (C) 200
1
10 100 ... |
| Description |
Silicon N-Channel IGBT
Silicon N-Channel IGBT 硅N沟道IGBT
IGBTs
|
| File Size |
40.22K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
