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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS ...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...V - DD 300 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 100 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS ...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ... 560 --- --- 7.5 4.0 --- 20 250 200 -200 95 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V Conditions VGS = 0V...3000 Ciss 12 2000 8 1000 4 Coss Crss 0 1 10 100 0 0 20 40 60 80 100 QG To...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V (B R )D S S tp Starting T , Junction Temperature( C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( o C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Curr...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...amped Inductive Test Circuit 200 0 25 50 75 100 125 150 175 V (B R )D SS tp Starting T J , Junction Temperature (oC) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Curr...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... = 60V, VGS = 0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = 60V 73 110 VGS = 10V 22 --- VDD = 38V 1...3000 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM 2500 VDS L D R IV...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...est Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Sam...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...est Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Sam...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ... M3 screw Max. 80 56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/C V mJ A mJ C 300 (1.6mm fro...3000 8 2000 4 1000 0 1 10 Coss Crss 100 0 0 40 80 120 160 Q G Total Gate Charg...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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