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    VACR

Vishay Siliconix
Part No. VACR
OCR Text ...er resistors vmn-pt0357-1302 1/ 2 aluminum housed compact resistor vishay intertechnology, inc. discrete semiconductors and passive compo...8k 50 to 150 10 ip65 ul 600 v/1000 v vacr200 200 9.1 to 1.5k 50 to 150 10 ip65 en 1000 v dc 3.3 to 9...
Description Aluminum Housed Compact Resistor

File Size 539.11K  /  2 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HMT41GV7BMR4C-H9
OCR Text ...gv7bmr4c rev. 0.1 / feb. 2010 2 revision history revision no. history draft date remark 0.1 initial release mar.2009 preliminary rev. 0...8k/64ms 8k/64ms 8k/64ms 8k/64ms row address a0-a14 a0-a14 a0-a14 a0-a14 column address a0-a9 a0-a9 ...
Description DDR DRAM MODULE, DMA240

File Size 1,060.21K  /  61 Page

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    JRC
Part No. NJM2573
OCR Text ...features operating voltage 2.8 to 5.5v input type vin1: clamp vin2: clamp/ bias vin3: bias internal lpf internal 6db a...8k gnd vout3 v + 750 gnd vout2 8.8k v + 750 gnd vsag2 8.8k ver.4 njm2573 - 9 - ...
Description Video Amplifier / PCSP16-E4 / SSOP14

File Size 1,095.98K  /  14 Page

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Part No. MT8VDDT3264HDY-202XX MT8VDDT6464HDG-202XX
OCR Text ...64 meg x 64) v dd = v dd q = +2.5v v ddspd = +2.3v to +3.6v  2.5v i/o (sstl_2 compatible)  commands entered on each positive ck edge ...8k 8k row addressing 4k (a0?a11) 8k (a0?a12) 8k (a0?a12) device bank addressing 4 (ba0, ba1) 4 (ba0,...
Description 32M X 64 DDR DRAM MODULE, 0.8 ns, DMA200
64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200

File Size 499.43K  /  30 Page

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Part No. MT8VDDT3264HDG-40BXX MT8VDDT3264HDY-265XX MT8VDDT3264HDG-335XX MT8VDDT6464HDG-265XX
OCR Text ...64 meg x 64) ?v dd = v dd q = +2.5v (-40b: v dd = v dd q = +2.6v) ?v ddspd = +2.3v to +3.6v ? 2.5v i/o (sstl_2-compatible) ? internal, p...8k 8k row address 8k (a0?a12) 8k (a0?a12) device bank address 4 (ba0, ba1) 4 (ba0, ba1) device confi...
Description 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200

File Size 390.85K  /  13 Page

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Part No. MT8VDDT3264HDG-265A1 MT8VDDT3264HDG-262XX
OCR Text ...28 meg x 64) v dd = v dd q = +2.5v v ddspd = +2.3v to +3.6v  2.5v i/o (sstl_2 compatible)  commands entered on each positive ck edge ...8k 8k 8k row addressing 4k (a0?a11) 8k (a0?a12) 8k (a0?a12) 16k (a0?a13) device bank addressing 4 (b...
Description 32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200

File Size 586.18K  /  32 Page

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    MT48LC128M4A2 MT48LC128M4A2TG MT48LC32M16A2 MT48LC32M16A2TG MT48LC64M8A2 MT48LC64M8A2TG

MICRON[Micron Technology]
Part No. MT48LC128M4A2 MT48LC128M4A2TG MT48LC32M16A2 MT48LC32M16A2TG MT48LC64M8A2 MT48LC64M8A2TG
OCR Text ... Programmable burst lengths: 1, 2, 4, 8, or full page * Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes * Self Re...8K 8K 8K 8K (A0-A12) 4 (BA0, BA1) 2K (A0-A9, A11) 8K (A0-A12) 4 (BA0, BA1) 1K (A0-A9) Row Address...
Description SYNCHRONOUS DRAM

File Size 1,800.02K  /  55 Page

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    MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC32M8A2TG-75IT

MICRON[Micron Technology]
Part No. MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 MT48LC32M8A2TG-75IT
OCR Text 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES * PC66-, PC100-, and PC133-compliant * Fully synchronous; all signals registered on ...8K 8K 8K 8K (A0-A12) 4 (BA0, BA1) 2K (A0-A9, A11) 8K (A0-A12) 4 (BA0, BA1) 1K (A0-A9) 8K (A0-A12) 4 ...
Description SYNCHRONOUS DRAM

File Size 1,487.75K  /  62 Page

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    1N4737AM 1N4743AM

Leshan Radio Company
Part No. 1N4737AM 1N4743AM
OCR Text ... 7.5 3447005 1n4738am1n4738am 8.2 314.56 1n4739am1n4739am 9.1 2857 1n4740am1n4740am 10 2577007.6 1n4741am1n4741am 11 2388.4 1n4742am1n4742am...8k 2k(t52) 1.8k(t26) 18k 20k 36k 36k 32.4k36k t42 quantity/cartoon 54k- t26 quantity/cartoon 60k- ...
Description 1W 1N47**AM Series Zener Diodes

File Size 182.59K  /  8 Page

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    5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 5962F0151601QYA 5962F0151601QYX 5962F0151601QYC 5962F0151601VXA 5962F015

Aeroflex Circuit Technology
Part No. 5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 5962F0151601QYA 5962F0151601QYX 5962F0151601QYC 5962F0151601VXA 5962F0151601VXX 5962F0151601VXC 5962F0151601VYA 5962F0151601VYC 5962G0151601QXA 5962F0151601VYX 5962G0151601QXC 5962G0151601QXX 5962G0151601QYA 5962G0151601QYC 5962G0151601QYX 5962G0151601VXA 5962G0151601VXC 5962G0151601VXX 5962G0151601VYA 5962G0151601VYC 5962G0151601VYX 5962H0151601QXA 5962H0151601QXC 5962H0151601QXX 5962H0151601QYA 5962H0151601QYC 5962H0151601QYX 5962R0151601QXA 5962R0151601QXC 5962R0151601QXX 5962R0151601QYA 5962R0151601QYC 5962R0151601QYX 5962R0151601VXA 5962H0151601VXA 5962H0151601VXX 5962H0151601VYA 5962H0151601VYC 5962H0151601VXC 5962R0151601VXC 5962R0151601VXX
OCR Text ...t - operating: 50ma maximum @18.2 mhz derating: 1.5ma/mhz - standby: 500 m a maximum (post-rad) q radiation-hardened process and design; ...8k x 8 programmable memory device. the ut28f64lv prom features fully asychronous operation requirin...
Description Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E5 rads(Si).
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E5 rads(Si).

File Size 78.31K  /  11 Page

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