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HITACHI[Hitachi Semiconductor]
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| Part No. |
PF0314 PF0313
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| OCR Text |
...frequency 135 to 150 MHz 150 to 175 MHz
Pin Arrangement
* RF-J 5 1 2 3 4 1: Pin 2: VPC 3: VDD 4: Pout 5: GND (Flange)
PF0313 Series
Internal Diagram and External Circuit
G GND Pin1 Pin Pin2 VPC Pin3 VDD Pin4 Pout
G GND
Z1
... |
| Description |
(PF0313 / PF0314) MOS FET Power Amplifier Module for VHF Band
From old datasheet system
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| File Size |
55.62K /
16 Page |
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ADVANCED SEMICONDUCTOR INC
ASI[Advanced Semiconductor]
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| Part No. |
PT9733 ASIPT9733
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| OCR Text |
...n Emitter * PG = 6.0 dB at 50 W/175 MHz * OmnigoldTM Metalization System
B
C E
OC
E B
D
H
I J
MAXIMUM RATINGS
IC VCES VEBO PDISS TJ TSTG JC 8.0 A 60 V 4.0 V 85 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W
DI... |
| Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR
From old datasheet system
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| File Size |
13.23K /
1 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1189 BFQ82
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| OCR Text |
...lues 12 20 20 2 80 80 10 10 500 175 - 65 ... + 175 - 65 ... + 175
Unit V
mA
mW C
Rth JA Rth JS
240 160
K/W
For det...MHz IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 M... |
| Description |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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| File Size |
399.68K /
18 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA07M1317M_06 RA07M1317M RA07M1317M-101 RA07M1317M06
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| OCR Text |
...ios that operate in the 135- to 175-mhz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF in... |
| Description |
RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
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| File Size |
91.99K /
8 Page |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA13H1317M_06 RA13H1317M RA13H1317M-101 RA13H1317M06
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| OCR Text |
...ios that operate in the 135- to 175-mhz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF in... |
| Description |
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
103.73K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H1721M-101 RA30H1721M
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| OCR Text |
...AGRAM
2 3
RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA30H1721M is a 30-watt RF MOSFET Amp...MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transis... |
| Description |
RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
91.23K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA60H1317M_06 RA60H1317M RA60H1317M-101 RA60H1317M06
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| OCR Text |
...ios that operate in the 135- to 175-mhz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF in... |
| Description |
RoHS Compliance ,135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
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| File Size |
87.86K /
8 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
SA701
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| OCR Text |
... = 0.20 A, Vds = 28.0 V, F =
175 MHz 175 MHz
VSWR
Relative Idq = 0.20 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Vo... |
| Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
35.62K /
2 Page |
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it Online |
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Price and Availability
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