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sTMicro
sT Microelectronics
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| Part No. |
M93s56 M93s46 M93s66 5124 M93s56-W
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| Description |
4KBIT, 2kbit AND 1KBIT (X16) sERIAL MICROWIRE BUs EEPROM WITH BLOCK PROTECTION
4K/2K/1K (x16) serial Microwire Bus EEPROM with Block Protection
From old datasheet system
4K-2K-1K (X16) sERIAL MICROWIRE BUs EEPROM WITH BLOCK PROTECTION
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| File Size |
161.31K /
23 Page |
 View
it Online |
Download Datasheet
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ECs, Inc.
Microchip Technology, Inc.
TE Connectivity, Ltd.
DB Lectro, Inc.
Electronic Theatre Controls, Inc.
samtec, Inc.
TriQuint semiconductor, Inc.
Infineon Technologies AG
Allegro Microsystems, Inc.
Rochester Electronics, LLC
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| Part No. |
C30616BQC-07-sC C30616EQC-07-sC C30617BsT-07-sC C30616BsC-07-sC C30617EFC-07-sC C30618BQC-07-sC C30616BsT-07-sC C30617BQC-07-sC C30616BFC-07-sC C30616EFC-07-sC C30616EsC-07-sC C30616EsT-07-sC C30617BsC-07-sC C30617EsC-07-sC C30617EsT-07-sC C30618BsC-07-sC C30617BFC-07-sC C30617EQC-07-sC C30618BFC-07-sC C30616EFC-04-sT C30617BQC-04-sT C30617EQC-04-sT C30616EsC-04-sT C30616EsT-04-sT C30617BsC-04-sT C30616EQC-04-sT C30616BQC-04-sT C30616BsT-04-sT C30617EsC-04-sT C30617BsT-04-sT C30616BsC-04-sT C30617BFC-04-sT C30616BFC-04-sT C30617EFC-04-sT C30617EsT-04-sT C30616BsC-04-FC C30616EFC-04-FC C30616EsC-04-FC C30616BQC-04-FC C30616BsC-04-sC C30616EsT-04-sC C30617BsC-04-sC C30617BsT-04-sC C30617EFC-04-sC C30616EQC-04-FC C30617BQC-04-sC C30616BsT-04-sC C30616EFC-04-sC C30616EQC-04-sC C30616BFC-04-FC C30617BFC-04-sC C30616BQC-04-sC C30616BsT-04-FC C30616BFC-04-sC C30616EsC-04-sC C30617BsT-04-FC C30616EsT-04-FC C30618EsT-04-sT C30618BFC-04-sT C30618ECER-04-sT C30618EFC-04-sT C30618BCER-04-sT C30618BQC-07-FC C30618BsT-04-sT C30618EsC-04-sT C30618BsT-07-FC C30618BsC-07-FC C30618BCER-07-FC C30618BQC-04-sT C30618BsC-04-sT C30617EsT-04-sC C30618EsT-04-sC C30637EsT-04-sC C30637BsT-04-sC C30618BsT-04-
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| Description |
Ultrafast high voltage rectifier
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
Ultrafast rectifier PDP energy recovery
4Kbit serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory
High voltage ultrafast diode
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory
1 Mbit serial I²C bus EEPROM
512 Kbit serial sPI bus EEPROM with high speed clock
256 Kbit serial sPI bus EEPROM with high-speed clock
300V HYPERFAsT RECTIFIER
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
32 Kbit and 64 Kbit serial sPI bus EEPROMs with high-speed clock
(CRT TV horizontal deflection) high voltage damper diode
HIGH FREQUENCY sECONDARY RECTIFIERs
128 Kbit serial sPI bus EEPROM with high speed clock
4 Kbit, 2 Kbit and 1 Kbit serial sPI bus EEPROM with high-speed clock 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电
16 Kbit and 8 Kbit serial sPI bus EEPROM with high speed clock 光电
Ultrafast recovery - 1200 V diode 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电
Ultrafast recovery - high voltage diode 光电
Damper modulation diode for CRT TV 光电
DAMPER MODULATION DIODE FOR VIDEO 光电
4Kbit, 2kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电
HIGH EFFICIENCY ULTRAFAsT DIODE 光电
HIGH VOLTAGE ULTRAFAsT RECTIFIER 光电
Ultrafast recovery diode 光电
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| File Size |
282.20K /
6 Page |
View
it Online |
Download Datasheet |
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sTMICROELECTRONICs[sTMicroelectronics]
意法半导
sTMicroelectronics N.V.
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| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
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| Description |
16Kbit, 8Kbit, 4Kbit, 2kbit and 1Kbit serial I2C Bus EEPROM
45 V, 100 mA NPN general-purpose transistors
General purpose PIN diode
12-Bit, 2.5 us Dual DAC, serial Input, Pgrmable settling Time, simultaneous Update, Low Power 8-CDIP -55 to 125
8-Bit Constant-Current LED sink Driver 16-TssOP -40 to 125
Removal Tool, Han D; RoHs Compliant:N/A RoHs Compliant: Yes
CRIMP sET 0.14 - 0.50MM ;
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f<sub>Tsub>: 1 GHz; Frequency: 4.5 MHz; I<sub>Csub>: 25 mA; Noise figure: 4.5@f1 dB; P<sub>totsub>: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit Constant-Current LED sink Driver 16-sOIC -40 to 125
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-sOIC -40 to 85
Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 us Octal DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 16-sOIC 0 to 70
Power LDMOs transistor
Three quadrant triacs guaranteed commutation - I<sub>GTsub>: 25 mA; I<sub>Tsub> (R<sub>Mssub>): 16 A; V<sub>DRMsub>: 600 V
18-Bit Registered Transceiver With 3-state Outputs 56-ssOP -40 to 85
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I<sub>Csub> max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 sKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MsPs ADC Triple Ch., Digital Clamp for YUV/NTsC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 us Octal DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 16-sOIC -40 to 85
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOsFET - ID: 30 mA; IDss: 100 (max) mA; VDsmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCEssORY
ER 5C 3#12 2#0 sKT RECP WALL
silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; Rs max: 0.7 ; VR max: 35 V
Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFsM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; socket: IF ; system frequency: 9
P-channel enhancement mode vertical D-MOs transistor - Configuration: single P-channel ; ID DC: 0.2 A; RDs(on): 12000@10V mOhm; VDsmax: 240 V
Removal Tool Han E Crimpcontacts in E Mo; RoHs Compliant:N/A
PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V<sub
Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMs): 16 A; VDRM: 600 V
PowerMOs transistor Logic level TOPFET - @ VIs: 5 V; ID: 0.7 A; Number of pins: 3 ; RDs(on): 0.2 mOhm; VDsmax: 50 V
silicon RF switches - [s21(Off)]2 min: 30 ; [s21(On)]2 max: 3 ; ID: 10 mA; IGss max: 100 nA; Mode: depl. ; RDs(on): 20 Ohm; s21(off): 30 dB; s21(on): 3 dB; VDsmax: 3 V; VsG max: 7 V
schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFsM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFsM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V
schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFsM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFsM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpose double transistor - Description: Current Mirror
ER 30C 24#16 6#12 sKT RECP WAL
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 sKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage switching diodes
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
PowerMOs transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
CONNECTOR ACCEssORY 连接器附
8-Bit, 10 us Quad DAC, serial Input, Pgrmable for 1x or 2x Output, simultaneous Update, Low Power 14-sOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MsPs 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high side switch sMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
For Use With:Harting Han D Contacts; Crimp Tool:service Crimping Tool with Locator; Wire size (AWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOs
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| File Size |
173.56K /
29 Page |
View
it Online |
Download Datasheet |
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意法半导
EEPROM
sTMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_s M24C02-WMN3G_s M24C02-WMN3P M24C02-WMN3P_s M24C02-WMN3T_s M24C02-WMN3TG_s M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/s M24C08-RBN3/s M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-sDW6T M24C16-sDW3T M24C16-sDs3T M24C16-sDs6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/s M24C08-WDs3 M24C08-WDs3G M24C08-WDs6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/s M24C08-WDs6G M24C08-WDs6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDs3/W M24C04-RMN3TP/s M24C08-WDW3G M24C08-WDs3/s M24C01-RBN6TP/W M24C08-WDs3P M24C01-WMN3TP/s M24C01-WDW6TP/s M24C01-WMN6TP/s M24C01-RBN3TP/s M24C04-RBN6T/W M24C04-RDs3G M24C04-WBN6T/W M24C04-RDs6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDs6T M24C04-RDs3T M24C04-RDs6G M24C02-WMN3/s M24C02-WMN6/W M24C08-WBN3G/s M24C16-WBN3G/s M24C16-RBN3G/s M24C01-RBN3G/s M24C01-WBN3G/s M24C02-RBN3G/s M24C02-WBN3G/s M24C04-RBN3G/s M24C04-WBN3G/s
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| Description |
16Kbit, 8Kbit, 4Kbit, 2kbit and 1Kbit serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
CRYsTAL 9.84375MHZ 10PF sMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G<sub>UMsub>: 7 dB; G<sub>UMsub> @ f1: 7 dB; I<sub>Csub>: 250 mA; P<sub>totsub>: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYsTALs 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 sKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
schottky barrier double diodes - C<sub>dsub> max.: 100@VR=4V pF; Configuration: dual c.a. ; I<sub>Fsub>: 1 A; I<sub>FsMsub> max: 10 A; I<sub>Rsub> max: 1@VR=25V mA; V<sub>Fsub>max: 450@IF=1A mV; V<sub>Rsub>: 25 V
XTL, OsC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
schottky barrier diode - C<sub>dsub> max.: 10@VR=1V pF; Configuration: single ; I<sub>Fsub> max: 200 mA; I<sub>FsMsub> max: 300 A; I<sub>Rsub> max: 2.3@VR=25VA; V<sub>Fsub>max: 400@IF=10mA mV; V<sub>Rsub> max: 30 V
CONNECTOR ACCEssORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount solid-state Relay,1-CHANNEL,sIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount solid-state Relay,1-CHANNEL,M:ML043MW015
CRYsTAL 4.897MHZ 20PF sMD
Thyristors - I<sub>GTsub>: 32 mA; I<sub>Tsub> (R<sub>Mssub>): 20 A; V<sub>DRMsub>: 650 V
Thyristors - I<sub>GTsub>: 32 mA; I<sub>Tsub> (R<sub>Mssub>): 20 A; V<sub>DRMsub>: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - I<sub>GTsub>: 0.2 (min 0.02) mA; I<sub>Tsub> (R<sub>Mssub>): 0.8 A; V<sub>DRMsub>: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - I<sub>GTsub>: 0.2 (min 0.02) mA; I<sub>Tsub> (R<sub>Mssub>): 0.8 A; V<sub>DRMsub>: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHs Compliant: Yes
PowerMOs transistor Logic level TOPFET - @ V<sub>Issub>: 5 V; I<sub>Dsub>: 15 A; Number of pins: 3 ; R<sub>Ds(on)sub>: 0.125 mOhm; V<sub>Dssub>max: 50 V
solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead solders; Provides short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (Us) RoHs Compliant: Yes
CRYsTAL 6.7458MHZ 20PF sMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; EsR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHs Compliant: Yes
REs ARRAY 24 OHM 8TRM 4REs sMD
sO8, 1MBIT/s HI sPEED DUAL CHANNEL TRANsIsTOR - 15kV/us; Package: sOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFsM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMs): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFsM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFsM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; V<su
Thyristors - IGT: 32 mA; IT (RMs): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFsM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFsM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMs): 20 A; VDRM: 800 V
schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFsM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFsM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOs transistor Logic level TOPFET - @ VIs: 5 V; ID: 15 A; Number of pins: 3 ; RDs(on): 0.125 mOhm; VDsmax: 50 V
HDWR PLATE sER 3 FRNT MNT BLK
OsCILLATORs 50PPM 0 70 3.3V 4 33.000MHZ Ts 5X7MM 4PAD sMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMs): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMs): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMs): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOs
single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin sOIC High speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOs
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOs
HDWR sPACER REAR MNT sER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb serial CMOs EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOs
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER sBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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