| |
|
 |

Samsung semiconductor International Rectifier Intersil Corporation
|
| Part No. |
IRF9150
|
| OCR Text |
...S ID = -250A, VGS = 0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = 20V ID = -10A, VGS = -10V (Figures 8, 9) VDS = -10V, ID = -12.5 (F... |
| Description |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
| File Size |
56.86K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

IRF[International Rectifier]
|
| Part No. |
IRF9230 JANTXV2N6806 JANTX2N6806
|
| OCR Text |
...
tr
t d(off)
tf
VGS 10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
-
V ... |
| Description |
TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
| File Size |
148.64K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

INTERSIL[Intersil Corporation]
|
| Part No. |
IRF9520 FN2281
|
| OCR Text |
...NS ID = -250A, VGS = 0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC MIN -100 ...6mm (0.25in) from Package to Center of Die
D LD
TYP 0.500 2 25 50 50 50 16 9 7 300 200 50 3.5
... |
| Description |
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
|
| File Size |
57.36K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|