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2A101 4KXXX MAX2232 ATA6830 5042B3A NDL7564P 20031 27XF020
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  00s Datasheet PDF File

For 00s Found Datasheets File :: 111    Search Time::1.219ms    
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    FIAM2T13 FIAM2C21 FIAM2T21 FIAM2T22 FIAM2T23 FIAM FIAM1C11 FIAM1C12 FIAM1C13 FIAM1C21 FIAM1C22 FIAM1C23 FIAM1T11 FIAM1T1

Vicor, Corp.
VICOR[Vicor Corporation]
Part No. FIAM2T13 FIAM2C21 FIAM2T21 FIAM2T22 FIAM2T23 FIAM FIAM1C11 FIAM1C12 FIAM1C13 FIAM1C21 FIAM1C22 FIAM1C23 FIAM1T11 FIAM1T12 FIAM1T13 FIAM1T21 FIAM1T22 FIAM1T23 FIAM2C11 FIAM2C12 FIAM2C13 FIAM2C22 FIAM2C23 FIAM2T11 FIAM2T12
OCR Text ... 25.0V Ch2 25.0V M5.00s Ch4 8.2A Figure 3--Inrush Limiting: Inrush current with 330F external capacitance. Figure 4--Transient Immunity: FIAM output response to an input transient. Transient and Surge Protection Not...
Description Filter Input Attenuator Module 过滤器输入衰减模

File Size 153.00K  /  4 Page

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    TRM-315-LT TRM-433-LT TRM-418-LT

List of Unclassifed Manufacturers
ETC
Part No. TRM-315-LT TRM-433-LT TRM-418-LT
OCR Text ...Carrier 1 8 T/R SEL 5.00s/div Figure 15: TX Turn-Off Time MODULE DESCRIPTION The LT Series transceiver is a low-cost, high-performance synthesized AM / OOK transceiver, capable of transmitting and receiving serial data at u...
Description LT SERIES TRANSCEIVER MODULE DATA

File Size 820.00K  /  13 Page

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    6HP04CH

Sanyo Semicon Device
Part No. 6HP04CH
OCR Text ...0.1 7 5 3 2 DC PW10s 1 1m 00s 10 s m s 10 0m s op era tio n( --0.01 7 5 3 2 Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5...
Description General-Purpose Switching Device Applications

File Size 49.41K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. MJE702 MJE700 MJE701 MJE703
OCR Text ... hFE, DC CURRENT GAIN -5 00s IB= -3 s IB= -200 1k -3 IB= -500s -2 IB= -100s 100 -1 -0 -0 -1 -2 -3 -4 10 -0.01 -0.1 -1 -10 V CE(V),COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure...
Description Monolithic Construction With Built-in Base- Emitter Resistors

File Size 50.72K  /  4 Page

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    IRFIZ46N

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFIZ46N
OCR Text ...T J = 17 5C T J = 25 C 10 1 00s 10 1m s 1 0.4 0.8 1.2 1.6 VG S = 0 V 2.0 A 1 1 T C = 25 C T J = 17 5C S ing le Pulse 10 10m s A 100 2.4 V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V Rds(on)=0.020ohm Id=33A)
Power MOSFET(Vdss=55V, Rds(on)=0.020ohm, Id=33A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.020ohm,身份证\u003d 33A条)

File Size 101.04K  /  8 Page

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    MP4004S MP5004S MP5006S MP4001S MP4002S MP4000S MP4006S MP4008S MP5001S MP5000S MP5002S MP5010S

CHENG-YI ELECTRONIC CO., LTD.
Part No. MP4004S MP5004S MP5006S MP4001S MP4002S MP4000s MP4006S MP4008S MP5001S MP5000s MP5002S MP5010S
OCR Text ...VRRM VRWM VR VR(RMS) 40 50 -00s -01S -02S -04S -06S -08S -10S UNIT 50 100 200 400 600 800 1000 V 35 70 140 280 40 50 420 560 700 V A IO Non-Repetitive Peak Forwa...
Description 40,50S IN-LINE BRIDGE RECTIFIER

File Size 143.73K  /  2 Page

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    IRLI3803 2315

IRF[International Rectifier]
Part No. IRLI3803 2315
OCR Text ...in C u rre n t (A ) 100 1 00s TJ = 2 5C 1 ms 10 0.4 0.8 1.2 1.6 2.0 2.4 VG S = 0 V 2.8 A 10 1 T C = 25 C T J = 17 5C S ing le Pulse 10 10 ms 100 A 3.2 V S D , Source-to-D rain V oltage (V ) V D S ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
From old datasheet system

File Size 99.90K  /  8 Page

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    2SK399409 2SK3994

Toshiba Semiconductor
Part No. 2SK399409 2SK3994
OCR Text ...max (pulse) EAS - Tch 500 00s * 1m s * 10 (mJ) Avalanche energy EAS 400 D max (continuous) 300 Drain current 1 DC operation Tc=25 200 100 0.1 Single nonrepetitive Ta=25 Curves must be derate...
Description Switching Regulator, DC/DC Converter Motor Drive Applications

File Size 237.24K  /  6 Page

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    SP860S SP840S SP8100S SP880S SP820S

SeCoS Halbleitertechnologie GmbH
Part No. SP860S SP840S SP8100s SP880S SP820S
OCR Text ...150 SP 820 S~S Tj=25 C P81 00s 8.3ms Single Half Sine Wave JEDEC method 100 50 FIG.5 - TYPICAL REVERSE 0 1 5 10 50 100 CHARACTERISTICS 100 NUMBER OF CYCLES AT 60Hz FIG.4-TYPICAL JUNCTION CAPACITANCE 2800 2400 2000 ...
Description 8.0AMP Schottky Barrier Rectifiers

File Size 389.23K  /  2 Page

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    IRF3103

InterFET Corporation
IR
Part No. IRF3103
OCR Text ...ITE D BY R D S(o n) 10 s 100 1 00s 100 T J = 17 5C T J = 2 5C I D , D ra in C u rre n t (A ) 1 ms 10 1 0m s 10 0.4 0.8 1.2 1.6 2.0 VG S = 0 V 2.4 A 1 1 T C = 25 C T J = 17 5C S ing le Pulse 10 100 A 2.8 ...
Description HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 98.66K  /  8 Page

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