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  0.50v Datasheet PDF File

For 0.50v Found Datasheets File :: 28713    Search Time::2.703ms    
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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- nH and center of die c...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. VNQ600AP13TR VNQ600AP
OCR Text ...VCC Maximum Switching Energy (L=0.11mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=40A) Power dissipation (per island) at Tlead=25C Junction operati...50V +50V -50V +50V -5V +46.5V Test Levels III -75V +75V -100V +75V -6V +66.5V Test Levels IV -100V +...
Description QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

File Size 218.28K  /  18 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...50V, ID = 25A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    S5A2250A01 S5A2250A01-D0B0

SAMSUNG[Samsung semiconductor]
Part No. S5A2250A01 S5A2250A01-D0B0
OCR Text ... - 20 - + 75 - 55 - + 125 VDD + 0.3 - VSS - 0.3 Unit V mW C C V ELECTRICAL CHARACTERISTICS (VDD = 12V, f = 1kHz, Ta = 25C, unless otherw...50V R218 1k R257 2.2k L R260 IC201 R236 10k R262 R263 2.2k 6.8k 2.2k R261 6.8k G R C247 2.2F/50V R25...
Description DUAL ELECTRONIC VOLUME CONTROL

File Size 122.82K  /  12 Page

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    BEL[Bel Fuse Inc.]
Part No. X7AH-10J S7AH-10J100 S7AH-10J120 S7AH-10J150 V7AH-10J100 V7AH-10J120 V7AH-10J150
OCR Text 0.9V-1.65V/10A Output x7AH-10J Series * * * * Non-Isolated Low profile package (7.82mm) Fixed frequency (300KHz) Under-voltage lockout (...50V Vin=2.75V 92.0% 90.0% 88.0% 86.0% 84.0% 82.0% 80.0% 78.0% 76.0% 74.0% 72.0% 70.0% 1 2 3 4 5 6...
Description NON-ISOLATED DC/DC CONVERTERS 2.5V Input 0.9V-1.65V/10A Output

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...50V, ID = 4.1A, (Figure 12) VDD = 125V, ID 8.1A, RG = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSF...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. XN04382
OCR Text ...For switching/digital circuits 0.650.15 6 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 2.9 -0....50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, V...
Description Silicon NPN(PNP) epitaxial planer transistor

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...50V, ID = 8A, (Figure 12) VDD = 125V, ID 14A, RG = 9.1, RL = 8.9 (Figures 17, 18) MOSFET Switching ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. S1A2298A01-A0B0 S1A2298A01
OCR Text ...7 Sif8 Test Conditions FM, VI = 0 AM, VI = 0 VO = -3dB VI = 80dBu VI = 80dBu VI = 80dBu VI = 80dBu VI = variable VI = 20dBu VI = 80dBu VI = ...50V R C27 4.7F /50V C4 0.068F C15 10.7M 0.082F C16 T1 C14 1F X1 456K C13 0.022F 4.7k ...
Description AM/FM TUNER MPX

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    IRFP4710PBF IRFP4710PBF-15

International Rectifier
Part No. IRFP4710PBF IRFP4710PBF-15
OCR Text ...et v dss r ds(on) max i d 100v 0.014 ? 72a pd - 95055 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 72 i d ...50v, i d = 45a q g total gate charge ??? 110 170 i d = 45a q gs gate-to-source ...
Description HEXFETPower MOSFET
High frequency DC-DC converters

File Size 173.51K  /  9 Page

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