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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF75945P3 HUF75945G3 HUF75945S3ST
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| OCR Text |
0.071 Ohm, N-Channel, UltraFET(R) Power MOSFETs Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
* Ultra Low On-Resistance - rDS(ON) ...38A, VGS = 10V (Figure 9)
2 -
0.056
4 0.071
V 3/4
SWITCHING SPECIFICATIONS (VGS = 10V... |
| Description |
38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs 38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs 38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs
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| File Size |
206.61K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRFR3518 IRFU3518 IRFR3518TR IRFU3518TR
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| OCR Text |
...s
Max.
80 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case )
Units
V
A W W/C V/ns C
Thermal Resistance
Parameter
...38A
ID, Drain-to-Source Current ()
2.5
100.00
RDS(on) , Drain-to-Source On Resistance
... |
| Description |
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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| File Size |
540.83K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
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| OCR Text |
...500 20 52 26 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V
Units
V
c
Diode Continuous Forward Current Dio...38A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 22 TJ = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V t... |
| Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
275.00K /
12 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
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| OCR Text |
...5 235 265 280 351 320 3511 1.26 0.68 13.51 Unit A A A A A A A2s A2s A2pt V V m
t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 38A, TJ = +25C TJ = +175C TJ = +175C
Note 1. I2t for time tx = I2 t S
tx
Thermal-Mechanical Speci... |
| Description |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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| File Size |
23.18K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5825 NTE5818 NTE5819 NTE5823
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| OCR Text |
...C = +100C Min - - - - Typ 1.2 1.0 10 0.5 Max 1.5 1.4 25 3.0 Unit V V A mA
Reverse Recovery Characteristics:
Parameter Reverse Recovery Time Reverse Recovery Current Symbol trr Test Conditions IF = 1A to VR = 30V IFM = 36A, di/dt = 25A/s... |
| Description |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V. Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
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| File Size |
17.84K /
2 Page |
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it Online |
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Price and Availability
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