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  0.38a Datasheet PDF File

For 0.38a Found Datasheets File :: 437    Search Time::2.328ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75945P3 HUF75945G3 HUF75945S3ST
OCR Text 0.071 Ohm, N-Channel, UltraFET(R) Power MOSFETs Packaging JEDEC TO-247 SOURCE DRAIN GATE Features * Ultra Low On-Resistance - rDS(ON) ...38A, VGS = 10V (Figure 9) 2 - 0.056 4 0.071 V 3/4 SWITCHING SPECIFICATIONS (VGS = 10V...
Description 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs
38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs

File Size 206.61K  /  10 Page

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    IRF[International Rectifier]
Part No. IRFR3518 IRFU3518 IRFR3518TR IRFU3518TR
OCR Text ...s Max. 80 20 38 27 150 110 0.71 5.2 -55 to + 175 300 (1.6mm from case ) Units V A W W/C V/ns C Thermal Resistance Parameter ...38A ID, Drain-to-Source Current () 2.5 100.00 RDS(on) , Drain-to-Source On Resistance ...
Description 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 540.83K  /  10 Page

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    IRF[International Rectifier]
Part No. IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
OCR Text ...500 20 52 26 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Units V c Diode Continuous Forward Current Dio...38A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 22 TJ = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V t...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 275.00K  /  12 Page

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    RA08N1317M RA08N1317M-01 RA08N1317M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text ...12 INPUT VSWR in (-) 10 8 6 4 2 0 130 140 150 160 170 FREQUENCY f(MHz) in @P out =8W V DD =9.6V P i n=20mW P o u t @VGG =3.5V 140 120 ...38A - 8.0W + 1.5W) x 2.4C/W = Tcase + 16.2 C For long-term reliability, it is best to keep the modul...
Description Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO

File Size 61.86K  /  9 Page

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    NTE[NTE Electronics]
Part No. NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
OCR Text ...5 235 265 280 351 320 3511 1.26 0.68 13.51 Unit A A A A A A A2s A2s A2pt V V m t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 38A, TJ = +25C TJ = +175C TJ = +175C Note 1. I2t for time tx = I2 t S tx Thermal-Mechanical Speci...
Description Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.

File Size 23.18K  /  2 Page

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    NTE[NTE Electronics]
Part No. NTE5825 NTE5818 NTE5819 NTE5823
OCR Text ...C = +100C Min - - - - Typ 1.2 1.0 10 0.5 Max 1.5 1.4 25 3.0 Unit V V A mA Reverse Recovery Characteristics: Parameter Reverse Recovery Time Reverse Recovery Current Symbol trr Test Conditions IF = 1A to VR = 30V IFM = 36A, di/dt = 25A/s...
Description Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.

File Size 17.84K  /  2 Page

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    SPP77N06S2-12 SPB77N06S2-12

Infineon Technologies A...
Infineon Technologies AG
Part No. SPP77N06S2-12 SPB77N06S2-12
OCR Text ...JC RthJA RthJA - Values typ. 0.63 max. 0.95 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specifi...38A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 ...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - TO220/263; 77 A; 55V; NL; 12 mOhm

File Size 310.94K  /  8 Page

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    SR230-6 SR230-24 SR60 SR660-9 SR110-12 SR110-15 SR110-18 SR110-2 SR110-20 SR110-28 SR110-48 SR110-5 SR110-6 SR110-9 SR20

LAMBDA[DENSEI-LAMBDA]
TE Connectivity, Ltd.
Rohm Co., Ltd.
Part No. SR230-6 SR230-24 SR60 SR660-9 SR110-12 SR110-15 SR110-18 SR110-2 SR110-20 SR110-28 SR110-48 SR110-5 SR110-6 SR110-9 SR20-12 SR20-15 SR20-18 SR20-2 SR20-20 SR20-24 SR20-28 SR20-48 SR20-5 SR20-6 SR20-9 SR230-12 SR230-15 SR230-18 SR230-2 SR230-20 SR230-28 SR230-48 SR230-5 SR230-9 SR330-12 SR330-15 SR330-18 SR330-2 SR330-20 SR330-24 SR330-28 SR330-48 SR330-5 SR330-6 SR330-9 SR35-12 SR35-15 SR35-18 SR35-2 SR35-20 SR35-24 SR35-28 SR35-48 SR35-5 SR35-6 SR35-9 SR60-12 SR60-15 SR60-18 SR60-2 SR60-20 SR60-24 SR60-28 SR60-48 SR60-5 SR60-6 SR60-9 SR660-12 SR660-15 SR660-18 SR660-2 SR660-20 SR660-24 SR660-28 SR660-48 SR660-5 SR660-6 SR110-24
OCR Text ... : -20 ~ +10%) Line regulation: 0.4% (2V output : 20mV), Load regulation: 0.4% (2V output : 20 mV) 50mV : 2 ~ 6V output, 60mV : 9 ~ 15V outp...38A 6V SR230-9 229.5W 25.5A 9V SR230-12 234W 19.5A 12V SR230-15 232.5W 15.5A 15V SR230 SR230-18 2...
Description Single output 20W ~ 660W隆隆
ZTK-89
Single output 20W ~ 660W 单输0660W
   Single output 20W ~ 660W

File Size 370.39K  /  4 Page

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    IRF150

Seme LAB
Part No. IRF150
OCR Text 0.675) 16.64 (0.655) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 7.87 (0.310) 6.99...38A 0.055 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058)...
Description N-CHANNEL POWER MOSFET

File Size 21.19K  /  2 Page

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    IRF150 JANTXV2N6764 JANTX2N6764

IRF[International Rectifier]
Part No. IRF150 JANTXV2N6764 JANTX2N6764
OCR Text ...umber IRF150 BVDSS 100V RDS(on) 0.055 ID 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The effic...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)

File Size 149.38K  /  7 Page

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For 0.38a Found Datasheets File :: 437    Search Time::2.328ms    
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