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				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	...Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in millimeters 0.3 +0.1 -0.05 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05...30 20 10 100 0 50 100 TA - Ambient Temperature - C 150 0 0.5 VBE - Base to Emitter...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...30 20 10 100 0 50 100 TA - Ambient Temperature - C 150 0 0.5 VBE - Base to Emitter...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...h Gain * Low Voltage Operation 0.3 +0.1 -0.05 PACKAGE DIMENSIONS in millimeters 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (...30 20 10 100 0 50 100 TA - Ambient Temperature - C 150 0 0.5 VBE - Base to Emitter...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	...n * Low Voltage Operation 2.1 0.2 1.25 0.1 PACKAGE DIMENSIONS in millimeters ORDERING INFORMATION 2 3 2.0 0.2 PART NUMBER 2SC501...30 100 60 mW 20 10 0 50 100 TA - Ambient Temperature - C COLLECTOR CURRENT vs. COLLECTOR...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	...DIMENSIONS in millimeters 2.1 0.2 0.3 +0.1 -0.05 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) 1 4 0.4 +0.1 -0.05 2SC5015-...30 150 150 -65 to + 150 V V V mA mW C C Caution: Electrostatic Sensitive Device Document No. P...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5034
OCR Text	...tings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C 15.00.3 3.00.2 Parameter Collector to base voltage Colle...30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C -25C VCE(sat) -- IC Collector power dissipat...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.16K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5063
OCR Text	...C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Abso...30 25 20 15 10 5 (2) (3) 0 0 20 40 Collector current IC (A) 1.6 1.4 1.2 1.0 60mA 0.8 0.6 0.4 0...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	60.70K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5080
OCR Text	...- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE =...30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 5 / div. 60 -150 -30 Condition...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	47.56K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1133 2SD1134
OCR Text	...est conditions I C = 10 A, IE = 0 I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A2 I C = 0.1 A2 I C = 2 A, IB...30 20 10 mA 1 IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 0.01 0 0.2 0.4 0.6 0...
Description	Silicon NPN Triple Diffused
File Size	32.05K / 5 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD1135
OCR Text	... -- -- -- -- 10 40 Max -- -- 0.1 200 -- 1.5 2 -- -- Unit V V mA Test conditions I C = 50 mA, RBE = I E = 10 A, IC = 0 VCB = 80 V, ...30 10 3 1 0.01 0.03 0.1 0.3 1.0 3 Collector current IC (A) Collector to Emitter Saturation Voltag...
Description	Silicon NPN Triple Diffused
File Size	31.07K / 5 Page	View it Online	Download Datasheet

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