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0.22a Datasheet PDF File

For 0.22a Found Datasheets File :: 1619 Search Time::1.047ms
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				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOK22N50
OCR Text	0.26 w symbol the aok22n50 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performan...22a turn-on rise time gate source charge gate drain charge switching parameters diode forward voltag...
Description	500V,22A N-Channel MOSFET
File Size	482.49K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP150N IRFP150
OCR Text	...d D VDSS = 100V RDS(on) = 0.036W G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced process...22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 11...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0.035W，身份证\u003d 42A条）
File Size	130.84K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB22NS25Z06
OCR Text	0.13 - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAYTM Power MOSFET General features Type STB22NS25Z STP22NS25Z VDSS 250V 250V RDS(on) <0.15 <0.15 ID 22A 22A 3 100% avalanche tested Extremely high dv/dt capability TO-...
Description	N-channel 250V - 0.13ヘ - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY⑩ Power MOSFET
File Size	288.36K / 14 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRHN9150
OCR Text	...dss r ds(on) i d irhn9150 -100v 0.080 w -22a irhn93150 -100v 0.080 w -22a features: n radiation hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) h...
Description	HEXFET Transistor(HEXFET 晶体的HEXFET晶体管（之HEXFET晶体管）
File Size	97.11K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STL100NHS3LL
OCR Text	0.0032 - 22A - PowerFLATTM (6x5) STripFETTM Power MOSFET plus monolithic Schottky Preliminary Data Features Type STL100NHS3LL VDSS 30V RDS(on) < 0.0042 ID 22A(1) 1. This value is rated according to Rthj-pcb Optimal RDS(on) x ...
Description	N-channel 30V - 0.0032Ω - 22A - PowerFLAT?(6x5) STripFET?Power MOSFET plus monolithic Schottky N-channel 30V - 0.0032ヘ - 22A - PowerFLAT⑩ (6x5) STripFET⑩ Power MOSFET plus monolithic Schottky N-channel 30V - 0.0032Ω - 22A - PowerFLAT (6x5) STripFET Power MOSFET plus monolithic Schottky
File Size	215.18K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHN9150 JANSF2N7422U JANSR2N7422U IRHN93150
OCR Text	... irhn9150 100k rads (si) 0.080 ? -22a jansr2n7422u irhn93150 300k rads (si) 0.080 ? -22a jansf2n7422u features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple dr...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package 22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET
File Size	123.97K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDA20N500707 FDA20N50F109
OCR Text	...eatures * 22A, 500V, RDS(on) = 0.23 @VGS = 10 V * Low gate charge ( typical 45.6 nC) * Low Crss ( typical 27 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability UniFET Description TM These N-Channel enhanceme...
Description	500V N-Channel MOSFET
File Size	736.66K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGP440U
OCR Text	... junction-to-case ------ ------ 0.77 r q cs case-to-sink, flat, greased surface ------ 0.24 ------ c/w r q ja junction-to-ambient, typical s...22a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectif...
Description	500V Discrete IGBT in a TO-3P (TO-247AC) package
File Size	107.10K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDA20N50F
OCR Text	0.26 Features * RDS(on) = 0.22 ( Typ.) @ VGS = 10V, ID = 11A * Low gate charge ( Typ. 50nC ) * Low Crss ( Typ. 27pF ) * Fast switching * 10...22A VGS = 0V, ISD = 20A dIF/dt = 100A/s (Note 4) - 154 0.5 22 88 1.5 - A A V ns C No...
Description	N-Channel MOSFET 500V, 22A, 0.26Ω N-Channel MOSFET 500V, 22A, 0.26ヘ
File Size	562.29K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF1310NSTRR
OCR Text	...iption v dss =100v r ds(on) = 0.036 w i d = 42a 2 d pak to-262 parameter typ. max. units r q jc junction-to-case CCC 0.95 r q j...22a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transco...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 42A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 100V的五（巴西）直\| 42A条（丁）\|63AB
File Size	183.98K / 10 Page	View it Online	Download Datasheet

For 0.22a Found Datasheets File :: 1619 Search Time::1.047ms
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