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Oki Electric Industry Co., Ltd.
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| Part No. |
MSC23CV23268D-60BS4
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| OCR Text |
... /we pulse width (dq disable) t wpe 10 - 10 - ns write command to /ras lead time t rwl 10 - 13 - ns write command to /cas lead time t cwl 10 - 13 - ns data-in set-up time t ds 0-0-ns data-in hold time t dh 10 - 13 - ns /cas active delay tim... |
| Description |
2M X 32 EDO DRAM MODULE, 60 ns, DMA72 PLASTIC, SODIMM-72
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| File Size |
73.55K /
9 Page |
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it Online |
Download Datasheet
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Oki Electric Industry Co., Ltd.
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| Part No. |
MSC23V13258D-60BS2
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| OCR Text |
... /we pulse width (dq disable) t wpe 7 - 10 - 10 - ns /oe command hold time t oeh 7 - 10 - 13 - ns /oe precharge time t oep 7 - 10 - 10 - ns /oe command hold time t och 7 - 10 - 10 - ns write command to /ras lead time t rwl 7 - 10 - 13 - ns ... |
| Description |
1M X 32 EDO DRAM MODULE, 60 ns, DMA100 DIMM-100
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| File Size |
81.58K /
10 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM53616004CK
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles be... |
| Description |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
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| File Size |
448.31K /
21 Page |
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it Online |
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STMicroelectronics N.V.
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| Part No. |
MSM54V32162A
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| OCR Text |
...8 320 10 10 10 12 20 t wpe we pulse width (output disable) ns 12 10 10 14 15 12 13 12 (v cc = 3.3 v 0.3 v, ta = 0c to 70c) note 1, 2, 3
8/26 ? semiconductor msm54v32126a notes: 1. an initial pause of 200 m s is required af... |
| Description |
131,072-Word ×32-Bit DYNAMIC RAM(128k字32位动态RAM) 131,072词32位动态随机存储器28K的字× 32位动态内存）
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| File Size |
374.07K /
26 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM5364005BSW
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc = 5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles ... |
| Description |
4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）
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| File Size |
375.73K /
19 Page |
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it Online |
Download Datasheet |
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