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  w glass Datasheet PDF File

For w glass Found Datasheets File :: 20964    Search Time::1.781ms    
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    DF10ST-G DF08SP-G DF005ST-G

Comchip Technology
Part No. DF10ST-G DF08SP-G DF005ST-G
OCR Text ... -polarit:as marked on body -w eight: 0.34 grams -the plastic material has ul flammability classification 94v -0 -mounting ...glass passivated bridge rectifiers page 2 rating and characteristics curves (df005s-g thru. df10s-g...
Description SMD glass Passivated Bridge Rectifiers

File Size 93.27K  /  4 Page

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    GRM155R71C103KA01J

Murata Manufacturing Co., Ltd.
Part No. GRM155R71C103KA01J
OCR Text ...quipment. (1)-1 l 1.00.05 (1)-2 w 0.50.05 e j f 330mm reel paper w8p2 50000 pcs./reel d f 180mm reel paper w8p2 10000 pcs./reel w f 180mm re...glass epoxy board)shown in of termination fig.3 using an eutectic solder. then apply 10n* force in p...
Description This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.

File Size 566.59K  /  29 Page

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    BCR8UM BCR8UM-12

Central Semiconductor, Corp.
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR8UM BCR8UM-12
OCR Text ...ase temperature Unit A A A2s w w V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate cu...glass PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IR...
Description 600 V, 8 A, TRIAC, TO-220 TO-220, 3 PIN
MEDIUM POwER USE INSULATED TYPE, glass PASSIVATION TYPE 中功率使用绝缘型,玻璃钝化型

File Size 54.69K  /  5 Page

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    TPC8A05-H

Toshiba Semiconductor
Part No. TPC8A05-H
OCR Text ... = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 1.0 w single-pulse avalanche energy (note 3) ...glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd...
Description High Efficiency DC-DC Converter Applications Notebook PC Applications

File Size 231.20K  /  8 Page

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    TPC8A03-H

Toshiba Semiconductor
Part No. TPC8A03-H
OCR Text ... = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 1.0 w single-pulse avalanche energy (note 3) ...glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v ...
Description TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

File Size 219.82K  /  8 Page

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    BY527 BY527_1

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BY527 BY527_1
OCR Text ...gth = 10 mm VALUE 46 100 UNIT K/w K/w 1996 Jun 11 3 Philips Semiconductors Product specification Controlled avalanche rectifier GRAPHICAL DATA MBG044 BY527 handbook, halfpage 3 handbook, halfpage 1.6 MBG05...
Description Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE
From old datasheet system

File Size 48.32K  /  7 Page

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    G1117 G2711-01 G1115 G1116 G1118 G1120 G3067

HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
Part No. G1117 G2711-01 G1115 G1116 G1118 G1120 G3067
OCR Text ...-01 (nm) Photo sensitivity S (A/w) p GaP LED 560 nm Terminal Temp. Dark Short circuit Rise time capacitance coefficient current current tr o...glass, L: lens type borosilicate glass, R: resin coating GaAsP photodiode sSpectral response 0....
Description    GaAsP photodiode

File Size 170.50K  /  4 Page

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    JANTX1N6461US JAN1N6461USE3 JANTX1N6467US

Microsemi Corporation
Part No. JANTX1N6461US JAN1N6461USE3 JANTX1N6467US
OCR Text ... failure cannot be tolerated. w orking p eak ? s tandoff? v oltage s are available from 5.0 to 51.6 v olts. they are very robust, using a hard glass casing and intern al category 1 metallurgical bonds. these devices are also...
Description Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
Voidless Hermetically Sealed Unidirectional Voidless Hermetically Sealed Unidirectional

File Size 481.20K  /  6 Page

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    MLL5238A 1N5221AUR 1N5221BUR 1N5222AUR 1N5222BUR 1N5245AUR 1N5230AUR 1N5233AUR 1N5233BUR 1N5234UR 1N5223AUR 1N5223BUR 1N

MICROSEMI[Microsemi Corporation]
Part No. MLL5238A 1N5221AUR 1N5221BUR 1N5222AUR 1N5222BUR 1N5245AUR 1N5230AUR 1N5233AUR 1N5233BUR 1N5234UR 1N5223AUR 1N5223BUR 1N5227AUR 1N5227BUR 1N5232AUR 1N5249UR 1N5274AUR 1N5274BUR 1N5274UR 1N5250AUR 1N5250BUR 1N5250UR 1N5251BUR 1N5271UR 1N5271AUR 1N5271BUR 1N5257AUR 1N5257BUR 1N5257UR 1N5238BUR 1N5244BUR 1N5248AUR 1N5273BUR 1N5273UR 1N5253AUR 1N5232UR 1N5243AUR 1N5243BUR 1N5238UR 1N5238AUR 1N5255BUR 1N5236AUR 1N5245BUR 1N5261UR 1N5262AUR 1N5226AUR 1N5226BUR 1N5240AUR 1N5264AUR 1N5264BUR 1N5264UR 1N5247AUR 1N5242AUR 1N5263AUR 1N5255AUR 1N5252UR 1N5248BUR 1N5280UR 1N5281AUR 1N5281BUR 1N5251AUR 1N5236BUR 1N5237UR 1N5239AUR 1N5244AUR 1N5253BUR 1N5279BUR 1N5225BUR 1N5246UR 1N5280BUR 1N5278UR 1N5276AUR 1N5276BUR 1N5259AUR 1N5259BUR 1N5259UR 1N5242BUR 1N5240BUR 1N5240UR 1N5262BUR 1N5262UR 1N5263BUR 1N5263UR 1N5275AUR 1N5275BUR 1N5275UR 1N5225AUR 1N5254BUR 1N5229AUR 1N5229BUR 1N5229UR 1N5230BUR 1N5256UR 1N5242UR 1N5247BUR 1N5247UR 1N5267BUR 1N5254AUR 1N5265AUR 1N5266BUR 1N5266UR 1N5222UR 1N5232BUR 1N5267AUR 1N5267UR 1N5269AUR 1N5269BUR 1N5280AUR 1N5239BUR 1N5239UR 1N5260BUR MLL5239B MLL5281B 1N5221UR 1N5223UR 1N5224AUR 1N5224BUR 1N5224UR 1N5225UR 1N5226UR 1N5227UR 1N5228AUR 1N5228BUR 1N5228UR
OCR Text ....microsemi.com APPEARANCE w w w. Microsemi .C OM DO-213AA FEATURES Surface mount equivalents to the JEDEC registered 1N5221 thr...glass body axial-leaded Zener equivalents also available per JEDEC registration (see separate data s...
Description 500 mw glass SURFACE MOUNT ZENER DIODES

File Size 188.95K  /  3 Page

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    Torex
Part No. XP135A1145SR TOR053
OCR Text ...0 20 -4 - 16 -4 UNITS V V A A A w O N-Channel/P - Channel MOS FET ( 2 devices built-in ) Power Dissipation (note) Channel Temperature...glass epoxy PCB Electrical Characteristics DC characteristics (P-Channel Power MOS FET) PARAM...
Description Power MOS FET
From old datasheet system

File Size 50.25K  /  5 Page

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