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  vceo-600v Datasheet PDF File

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    CFB1063 CFB1063P CFD1499Q

Continental Device India Limited
Part No. CFB1063 CFB1063P CFD1499Q
Description 2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q

File Size 146.86K  /  3 Page

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    ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL9R860S3STNL

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL9R860S3STNL
Description 8A, 600V Stealth Single Diode
8A, 600V Stealth Diode
8A, 600V Stealth⑩ Diode
8A, 600V StealthDiode

File Size 98.14K  /  6 Page

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    CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y

Continental Device India Limited
Part No. CSB1116 CSB1116A CSB1116G CSB1116L CSB1116Y
Description 0.750W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 135 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 200 - 400 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 300 - 600 hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 135 - 270 hFE

File Size 154.32K  /  3 Page

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    CSB546O CSB546R CSB546Y

Continental Device India Limited
Part No. CSB546O CSB546R CSB546Y
Description 25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401

File Size 120.72K  /  3 Page

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    HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Part No. RHRP640CC FN4464 RHRP660CC RHRP650CC
Description 6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????)
6A/ 400V - 600V Hyperfast Dual Diodes
6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管)
6A, 400V - 600V Hyperfast Dual Diodes
From old datasheet system

File Size 81.18K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S
Description 4A, 600V Stealth Single Diode
4A, 600V Stealth Diode
4A 600V Stealth Diode
4A, 600V Stealth⑩ Diode
4A, 600V StealthDiode

File Size 101.47K  /  6 Page

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    ASI10593 HF10-12S

Advanced Semiconductor, Inc.
Part No. ASI10593 HF10-12S
Description NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 16.69K  /  1 Page

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    ASI10592 HF10-12F

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10592 HF10-12F
Description NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR

File Size 17.26K  /  1 Page

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    SIEMENS AG
Infineon
Part No. BCX54 BCX55 BCX55-16 BCX55-10
Description NPN Silicon AF Transistors(NPN硅放大器晶体
General Purpose Transistors - SOT89; VCEO=60 V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=45V; hFE 40..250

File Size 97.71K  /  5 Page

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    IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL

IRF[International Rectifier]
Part No. IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20MD-STRL
Description 600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB

File Size 199.42K  /  11 Page

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