| |
|
 |
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
QM50CY-H
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, ... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
| File Size |
71.32K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
QM20DX-H
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=0.28A -IC=20A (diode forward voltage) IC=20A, ... |
| Description |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
| File Size |
66.38K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
QM100HA-H QM100HY-H
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A -IC=100A (diode forward voltage) IC=100A... |
| Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
| File Size |
84.94K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Micro Bridge Technology Co.,Ltd.
|
| Part No. |
ACT355A
|
| OCR Text |
...
Emitter-Drive Safe Region
VCEO
VCBO
VC
Table 1: Recommended NPN Transistor DEVICE
MJE13002
External Power Transistor
The...600V to 700V. As seen from Figure 2, NPN Reverse Bias Safe Operation Area, the breakdown voltage of ... |
| Description |
ActivePSRTM Primary Switching Regulators
|
| File Size |
329.89K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
QM200HA-24
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
|
| File Size |
66.40K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
QM200HA-HK
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=2.6A -IC=200A (diode forward voltage) IC=200A... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
|
| File Size |
70.59K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
QM200HA-HK
|
| OCR Text |
... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=200A, IB=2.6A -IC=200A (diode forward voltage) IC=200A... |
| Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
| File Size |
78.66K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
