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  v 400v Datasheet PDF File

For v 400v Found Datasheets File :: 11311    Search Time::1.484ms    
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    S26MD01 S26MD02 S16MD01 S16MD02 S26.D01 S26.D02

SHARP[Sharp Electrionic Components]
Part No. S26MD01 S26MD02 S16MD01 S16MD02 S26.D01 S26.D02
OCR Text ... 25 C) Symbol IF vR IT I surge v DRM v iso T opr T stg T sol Rating 50 6 0.6 6 400 600 4 000 - 25 to + 80 - 40 to + 125 260 Unit mA v A rms A v v v rms C C C " In the absence of confirmation by device specification sheets, SHARP takes n...
Description 8-Pin DIP Type SSR for Low Power Control

File Size 66.31K  /  4 Page

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    Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2

ST Microelectronics
STMicroelectronics
Part No. Z00607DA Z00607DA1BA2 Z00607MA Z00607MA1BA2
OCR Text ... Z00607xA D 400 M 600 Unit v May 1999 - Ed: 1 1/4 Z00607DA / Z00607MA THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead Parameter value 150 60 Unit C/W C/W GATE CHARACTERISTICS (maximum valu...
Description SENSITIvE GATE TRIACS

File Size 63.31K  /  4 Page

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    2SK2677

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SK2677
OCR Text ... 20 10 65 10 260 26 2 0.8 Unit v Pulse width10s, Duty cycle1/100 A W A mJ kv Nm Tch = 150 Tch = 25 Tch = 25 Terminals to case,AC 1...400v, vGS = 10v, ID = 10A vDS = 25v, vGS = 0v, f = 1MHZ ID = 5A, RL = 30, vGS = 10v 90 2150 50 21...
Description HvX-2 Series Power MOSFET(900v 10A)

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    ACS302-5T3 ACS302-5T3-TR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ACS302-5T3 ACS302-5T3-TR
OCR Text ...00v CLAMPING vOLTAGE: vCL = 600 v NOMINAL CONDUCTING CURRENT PER LINE: IT(RMS) = 0.2 A NOMINAL CONDUCTING CURRENT FOR TOTAL ARRAY: IT(RMS) =...400v gate open (dv/dt)c = 5v/s IOUT > 0 tp = 380s Tj=25C Tj=25C Tj=125C Tj=110C Tj=110C Tj=110C Tj=2...
Description THREE LINES AC SWITCH ARRAY
THREE LINES AC SWITCH ARRAY

File Size 119.66K  /  7 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2vFR
OCR Text v (R) FREDFET T-MAXTM Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolog...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 47A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM vERT 3POS PCB 电源MOS v是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2vR APT5010B2vRG
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 47A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010JN APT5012JN APT5012

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT5010JN APT5012JN APT5012
OCR Text ...ALIZED TO = 10v @ 0.5 I [Cont.] v GS D 0 2.0 TJ = +25C 60 TJ = +125C 40 1.5 vGS=10v vGS=20v 1.0 20 TJ = +125C TJ = ...400v 8 120 TJ =+150C 80 4 40 TJ =+25C TJ =-55C 100 200 300 400 500 Qg, TOTAL GATE ...
Description POWER MOS Iv 500v 48.0A 0.10 Ohm / 500v 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET

File Size 60.42K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JvFR
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimiz...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JvRU2
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET e...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS v 500v 44A 0.100 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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