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For typo Found Datasheets File :: 717 Search Time::2.094ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text	... 1.1 (August, 2003) - Corrected typo Revision1.2 (October, 2004) - Corrected typo. Revision1.3 (April, 2005) - Added notice and corrected typo. DDR SDRAM Rev. 1.3 April, 2005 DDR SDRAM 256Mb E-die (x4, x8) Key Features * Double-...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560838E-NCA2 K4H560438E-NCB3 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLB0 K4H560438E-NLB3 K4H560438E-NLB0 K4H560838E-NLB3 K4H560838E-NLA2
OCR Text	...n1.1 (August, 2003) - Corrected typo in package phyisical dimension and deleted speed AA. Revision1.2 (October, 2004) - Corrected typo. Revision1.3 (April, 2005) - Added notice and corrected typo. DDR SDRAM Rev. 1.3 April, 2005 DD...
Description	256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二 DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
File Size	216.89K / 24 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/LB3 K4H510838B-NC/LCC K4H510838B-VC/LCC K4H510838B-VC/LB3 K4H510838B-VC/LA2 K4H510838B-VC/LB0 K4H510838B-N
OCR Text	... Deleted speed AA and corrected typo. - Finalized - Corrected typo. - Corrected typo. - Deleted x4 org. and changed master format. History DDR SDRAM Rev. 1.3 June. 2005 DDR SDRAM 512Mb B-die (x8) 1.0 Key Features * VDD : 2.5V 0...
Description	512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 512MB的乙芯片DDR SDRAM内存规格54 sTSOP -Ⅱ（400mil x 441mil
File Size	346.41K / 24 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4H511638F
OCR Text	...release Rev1.0 SPEC - Corrected typo of test condition of "CC" speed IDD7A on page 12 - typo Correction - Added speed @ CL2 in the Operation Frequency on page 4 - typo Correction - Added operation frequency of DDR266 @ CL2 on page 4 History...
Description	512Mb F-die DDR SDRAM Specification
File Size	397.07K / 24 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	S3C44B0X
OCR Text	...CON : ST7, ST6 and DW7 bits The typo is corrected and added additional explanation. WS7 [30] This bit determines WAIT status for bank 7 (If bank7 has DRAM or SDRAM, WAIT function is not supported) 0 = WAIT disable 1 = WAIT enable These two ...
Description	PDA/GPS/LCD Game/E Book S3C44A0X Errata
File Size	55.01K / 11 Page	View it Online	Download Datasheet

				NEC, Corp. Winbond
Part No.	W83977AF W83977F
OCR Text	...,124, 130,131,148 03/10/97 0.58 typo correction and data calibrated 01/30/97 02/13/97 03/03/97 05/24/97 7/15/97 11/17/97 0.52 0.53 0.54 0.55 0.56 0.57 Register Correction; pages rearranging. Spec. Correction; typo correction Spec. Correctio...
Description	PLUG & PLAY 1.0A COMPLIANT 插头 PLUG & PLAY 1.0A COMPLIANT
File Size	2,637.80K / 181 Page	View it Online	Download Datasheet

				INTERSIL CORP
Part No.	CD4016BE
OCR Text	...ce matched to within 10 n typo over 15-v signal-input range characteristic ? supply voltage range (for t a = full package limits units min. max. _ high on/off output-voltage ratio: 65 db typo @ fis = 10 ...
Description	SGL POLE SGL THROW SWITCH, PDIP14
File Size	307.06K / 5 Page	View it Online	Download Datasheet

				Feature Integration Technology Inc.
Part No.	F71808E F71808EU
OCR Text	...dd EuP relative registers Rvise typo Revise 3VSBSW# description Add 3VBSW# timing chart Add Pin 27 internal pull-high description Modify register typo. Revise CR27 default to 1 Add "Power Saving" in LDN=0A description Revise CR2Ah bit[3:2]...
Description	Super Hardware Monitor + LPC I/O with Power Saving Control
File Size	682.92K / 92 Page	View it Online	Download Datasheet

				Feature Integration Technology Inc.
Part No.	F71889
OCR Text	...d VID/GPIO new functions Modify typo. Modify the description of pin99, pin122 Update application circuit page 1. Add VREF timing sequence sketch Update application circuit page 1. Rename pin99 AVCC to AVSB Modify the description of Index 27...
Description	Super Hardware Monitor LPC I/O
File Size	2,825.12K / 114 Page	View it Online	Download Datasheet

				Winbond
Part No.	W83977AF-A W83977AF-P W83977AG-A W83977F-A W83977F-P W83977G-A
OCR Text	...t publication Spec. Correction; typo correction 3 4 5 6 7 8 9 117-125,127 9,10,120-122 127,135,136,169 VIII,IX,166-169 P118 53,54,58,61,62, 63,65,124,125 1,3,11,52,91,105, 109,110,111,113, 114,115,119,124, 130,131,148 n.a. 01/30/97...
Description	WINBOND I/O
File Size	1,198.65K / 182 Page	View it Online	Download Datasheet

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