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  tp-39 Datasheet PDF File

For tp-39 Found Datasheets File :: 6215    Search Time::2.141ms    
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    BZA109TS

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BZA109TS
OCR Text ... = 25 C DC; Tamb = 25 C; note 1 tp = 1 ms; square wave tp = 1 ms; square wave Tamb = 25 C; note 2 - -65 -65 MIN. - - - - BZA109TS MAX....39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108...
Description 9-fold ESD Transient Suppressor

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    HMM5135B HMM5152B HMM5155B HMM5129B HMM5125B HMM5123B HMM5128B HMM5130B HMM5126B HMM5133B HMM5154B HMM5156B HMM5139B HMM

Electronic Theatre Controls, Inc.
DC Components Co., Ltd.
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC CORP.
Hi-Sincerity Mocroelectronics
N.A.
Part No. HMM5135B HMM5152B HMM5155B HMM5129B HMM5125B HMM5123B HMM5128B HMM5130B HMM5126B HMM5133B HMM5154B HMM5156B HMM5139B HMM5157B HMM5138B HMM5147B HMM5134B HMM5121B HMM5122B HMM5124B HMM5127B HMM5132B HMM5229B HMM5223B HMM5225B HSMCCORP.-HMM5161B HMM5247B HMM5159B HMM5151B HMM5158B HMM5160B HMM5137B HMM5153B HMM5257B HMM5131B HMM5141B HMM5140B
OCR Text ...for 20% 2.*Measured With Pulses Tp=40m Sec. Absolute Maximum Ratings Characteristics Symbol Value Zener Current see Table "Characteristics" Ptot 500* Power Dissipation at Tamb=25C Junction Temperature Tj 175 Storage Temperature Range Ts...
Description Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Zener Diodes (52 Series) 齐纳二极管(52系列
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)

File Size 38.24K  /  3 Page

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    IRF720B IRFS720B IRFS720

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF720B IRFS720B IRFS720
OCR Text ...& Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF720B/IRFS720B...
Description 400V N-Channel MOSFET

File Size 876.47K  /  10 Page

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    IRF730

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. IRF730
OCR Text ...ed inductive load, IAS = 4.8 A; tp = 0.23 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive aval...39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 ...
Description PowerMOS transistor Avalanche energy rated

File Size 55.04K  /  7 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...IA S + - VD D A 190 tp 0 .0 1 Fig 12c. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 Starting Tj, Junction T...39 ) 0.2 5 (.01 0) M 3 .40 (.1 33 ) 3 .00 (.1 18 ) C AS 0 .8 0 (.0 31 ) 3X 0 .4 0 (.0 16 ) 2.60 (...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

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    IRFP450B

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFP450B
OCR Text ...& Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V (c)2001 Fairchild Semiconductor Corporation Rev. B, November 2001 IRFP450B Peak...
Description 500V N-Channel MOSFET

File Size 705.34K  /  8 Page

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    IRFS450B IRFS450 FS450 EA0450M

FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFS450B IRFS450 FS450 EA0450M
OCR Text ...& Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V (c)2001 Fairchild Semiconductor Corporation Rev. B, November 2001 IRFS450B Peak...
Description Discrete MOSFETs
500V N-Channel MOSFET

File Size 685.08K  /  8 Page

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    M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP
OCR Text ...M family. M 5M 4 V 4 S 4 0 C TP - 12 Cycle Time (min.) 12: 12ns, 15: 15ns Package Type TP: TSOP(II) Process Generation Function 0: Rando...39 SDRAM (Rev. 0.3) MITSUBISHI LSIs Feb `97 Preliminary M5M4V4S40CTP-12, -15 BL=4 4M...
Description 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
From old datasheet system

File Size 1,456.01K  /  45 Page

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    MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT

ONSEMI[ON Semiconductor]
Part No. MMQA5V6T3 MMQA20VT3 MMQA20VT3G MMQA6V2T1 MMQA6V2T1G MMQA6V2T3 MMQA6V8T1 MMQA6V8T3 MMQA15VT1 MMQA15VT3 MMQA18VT3 MMQA18VT1 MMQA27VT1 MMQA27VT3 MMQA MMQA12VT1 MMQA12VT1G MMQA12VT3 MMQA13VT1 MMQA20VT1 MMQA21VT1 MMQA21VT3 MMQA22VT1 MMQA22VT3 MMQA24VT1 MMQA24VT3 MMQA30VT1 MMQA30VT3 MMQA33VT1 MMQA33VT3 MMQA5V6T1 MMQA-D MMQA30V MMQA33V MMQA13V MMQA12V MMQA20V
OCR Text ...E CURRENT tr PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 10 ms IRSM 2 100 90 80 70 60 50 40 30 20 10 0 tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE ...
Description SC-74 Quad Monolithic Common Anode 资深大律 74四单片共阳极
SC-74 Quad Monolithic Common Anode 150 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
CIR 60C 60#16 SKT RECP
SC-59 Quad Monolithic Common Anode

File Size 67.33K  /  6 Page

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    MMSF5N02HD ON2268

Motorola, Inc.
Part No. MMSF5N02HD ON2268
OCR Text ... Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation @ TA = 25C (1) Operating and Storage Temperature Range Single Pulse Drain-...39 30.3 3.0 7.5 6.0 30 185 70 80 -- -- -- -- 43 -- -- -- nC ns (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 M...
Description SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
From old datasheet system

File Size 293.25K  /  10 Page

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For tp-39 Found Datasheets File :: 6215    Search Time::2.141ms    
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