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MAXWELL[Maxwell Technologies]
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| Part No. |
903RPFS 903 903RPFB 903RPFE 903RPFI
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| OCR Text |
...input is driven low. Capable of surviving space environments, the 903 is ideal for satellite, spacecraft, and space probe missions. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the micro... |
| Description |
High Speed Comparator
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| File Size |
266.30K /
14 Page |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
EFJ2803K EFJ2803 EFJ2803E EFJ2803H
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| OCR Text |
...ll operating temperatures while surviving very high G forces. The 8-pin package is hermetically sealed and isolated from the internal circuits. Heat sinking is recommended for full power operation at elevated ambient temperatures. Multiple ... |
| Description |
3A EMI FILTER
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| File Size |
165.28K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9230
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
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| File Size |
102.18K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRH9250
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD H... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)
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| File Size |
101.45K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHE8110 IRHE7110
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
314.98K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF7310SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
35.65K /
4 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHI7360SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
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| File Size |
83.22K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHI7460SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
83.17K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7264SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
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| File Size |
91.23K /
4 Page |
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it Online |
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