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  sorce Datasheet PDF File

For sorce Found Datasheets File :: 61    Search Time::1.109ms    
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    GREATECS
Part No. G12JVCF
OCR Text ... and requires an external power sorce. dp tl22 on none on 1-1b 2-2b open 1-1a 2-2a dpdt poles & circuits keyway keyway 1 1b 2b 2 (com) 1a 2a (+) (-) d 17.5mm combines with silver contacts only s 11.0mm combines with gold con...
Description Ultra-Miniature Fully Illuminated Toggle Switches

File Size 2,051.21K  /  6 Page

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    ST Microelectronics
Part No. STRH100N6FSY2
OCR Text ... figure 11. sorce drain-diode forward characteristics strh100n6fsy3 package mechanical data 7/9 3 package mechanical data dim. mm. inch min. typ max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 ...
Description 80 A, 60 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3

File Size 200.78K  /  9 Page

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    ST Microelectronics
Part No. STRH100N10FSY2
OCR Text ... figure 11. sorce drain-diode forward characteristics strh100n10fsy3 package mechanical data 7/9 3 package mechanical data dim. mm. inch min. typ max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 ...
Description 72 A, 100 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3

File Size 199.77K  /  9 Page

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    Samsung
Part No. TDTC9251DH01C
OCR Text ... -35dbm c: turn undesired dvb-t sorce off ; turn desired dvb-t on. d: adjust desired dvb-t to -35dbm e: turn undesired dvb-t on and increase step attenuator in desired dvb-t channel until q.e.f. co-channel pal interference test procedure a...
Description Digital Terrestrial NIM

File Size 329.47K  /  11 Page

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    SI4922BDY-T1-E3

Vishay Siliconix
Part No. SI4922BDY-T1-E3
OCR Text ...2.5 t a = 25 c 1.7 b, c pulsed sorce-drain current i sm 35 single pulse avalanche current l = 0.1 mh i as 15 single-pulse avalanche energy e as 11.2 mj maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a...
Description Dual N-Channel 30-V (D-S) MOSFET

File Size 251.91K  /  10 Page

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    SI4906DY SI4906DY-T1-E3

Vishay Siliconix
Part No. SI4906DY SI4906DY-T1-E3
OCR Text ...2.5 t a = 25 c 1.7 b, c pulsed sorce-drain current i sm 30 single pulse avalanche current l = 0.1 mh i as 13 single-pulse avalanche energy e as 8.5 mj maximum power dissipation t c = 25 c p d 3.1 w t c = 70 c 2 t a = 25 c 2 b, c t a ...
Description Dual N-Channel 40-V (D-S) MOSFET

File Size 264.54K  /  10 Page

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    SamHop Microelectronics...
Part No. STS126
OCR Text .... on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to ...
Description Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 91.92K  /  7 Page

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    SamHop Microelectronics
Part No. SDD02N25
OCR Text .... on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) 240 200 160 120 ...
Description N-Channel Field Effect Transistor

File Size 106.58K  /  8 Page

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    SamHop Microelectronics...
Part No. STK801
OCR Text .... on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) v ds , drain-to ...
Description Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor

File Size 106.81K  /  7 Page

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For sorce Found Datasheets File :: 61    Search Time::1.109ms    
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