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  snubbing Datasheet PDF File

For snubbing Found Datasheets File :: 1802    Search Time::8.656ms    
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    MTP15N06VL MTP15N06VL_D ON2553

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06VL MTP15N06VL_D ON2553
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VGS = 0 V TJ = 25C Ciss GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
From old datasheet system

File Size 215.91K  /  8 Page

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    MTP15N06V ON2554

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP15N06V ON2554
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V Ciss VGS = 0 V TJ = 25C 1200 C, CAPACITANCE (pF) 900 600 Crss Ciss Coss Crss 300 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOUR...
Description TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
From old datasheet system

File Size 163.67K  /  8 Page

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    MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. 5000 VDS = 0 V VGS = 0 V TJ = 25C 4000 C, CAPACITANCE (pF) Ciss 3000 2000 Crss Ciss 1000 0 10 Crss 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE-TO-SO...
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM
From old datasheet system

File Size 222.23K  /  8 Page

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    MTP23P06V ON2569

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTP23P06V ON2569
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25C 2000 Ciss 1000 Coss 0 10 5 VGS 0 VDS Crss 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitanc...
Description TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system

File Size 192.44K  /  8 Page

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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. 1800 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25C 1000 VGS = 0 V TJ = 25C Ciss C, CAPACITANCE (pF) ...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V Ciss VGS = 0 V TJ = 25C GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transis...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V Ciss VGS = 0 V TJ = 25C GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transis...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25C GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor D...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25C Crss GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Tran...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP40N10E ON2608 ON2607

Motorola, Inc
Part No. MTP40N10E ON2608 ON2607
OCR Text ...nto an inductive load; however, snubbing reduces switching losses. GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTP40N10E VGS, GATE-TO-...
Description TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
From old datasheet system

File Size 157.60K  /  8 Page

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For snubbing Found Datasheets File :: 1802    Search Time::8.656ms    
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