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FUJI[Fuji Electric]
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| Part No. |
2SK3788-01
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| OCR Text |
...] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 150 150 92 368 30 92 1205.7 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Rem...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
500
140
Typi... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
95.95K /
4 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK3216-01
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| OCR Text |
...1 Max. power dissipation Ta=25C PD Tc=25C PD Operating and storage Tch temperature range Tstg Rating 100 50 200 30 464 1.67 135 +150 -55 to ...01
Characteristics
Power Dissipation PD=f(Tc)
150 10
FUJI POWER MOSFET
Safe operating area ID... |
| Description |
N-CHANNEL SILICON POWER MOS-FET
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| File Size |
141.91K /
4 Page |
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it Online |
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http:// FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD. FUJI ELECTRIC CO LTD
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| Part No. |
2SK2763-01
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| OCR Text |
... DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 30 4 358 100 150 -55 ~ +150 Unit V A A V A mJ W C C
> Equivalent Circuit
...01
FAP-IIS Series
Drain-Source-On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=2A; VGS=10V
4A... |
| Description |
N-channel MOS-FET
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| File Size |
291.53K /
2 Page |
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ICS
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| Part No. |
ICS674-01 ICS67401
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| OCR Text |
...mitted)
Divide B = (DBW+8) x PD Where Divider B Word (DBW) = 4 to 511 (0, 1, 2, 3 are not permitted) Post Divider (PD) = values on page 2...01 D Integrated Ci rcu it Systems
l
3
525 Ra ce St reet, San Jose , CA 9512 6
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Revision 05... |
| Description |
Dual Configurable Divider From old datasheet system
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| File Size |
113.77K /
7 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK2526-01
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| OCR Text |
...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 60 150 -55 ~ +150 Unit V V A A V W C C
> Equivalent Circuit
- Ele...01
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
5A
60W... |
| Description |
N-channel MOS-FET
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| File Size |
167.90K /
2 Page |
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it Online |
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Price and Availability
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