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  mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415    Search Time::1.891ms    
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    SeCoS
Part No. STT3423P
OCR Text mos.fet elektronische bauelemente 23-jul-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ?? 6 1 3 2 5 4 rohs compliant product a suffix of ?-c? specifie...
Description P-Channel Enhancement Mode Mos.FET

File Size 491.67K  /  4 Page

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    STT3423P

SeCoS Halbleitertechnologie GmbH
Part No. STT3423P
OCR Text mos.fet elektronische bauelemente 23-jul-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ?? 6 1 3 2 5 4 rohs compliant product a suffix of ?-c? specifie...
Description P-Channel Enhancement Mode Mos.FET

File Size 501.52K  /  4 Page

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    APT1201R4BLL APT1201R4SLL

Advanced Power Technology Ltd.
Part No. APT1201R4BLL APT1201R4SLL
OCR Text ...201r4sll 1200v 9a 1.400 w power mos 7 tm is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 tm by significantly lowering r ds(on) a...
Description POWER MOS 7 1200V 9A 1.400 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 69.49K  /  2 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFF640
OCR Text ...a a a a nn nn nn nn el el el el mos mos mos mos f f f f et et et et features 18a,200 v . r ds(on ) (max 0 . 1 8 )@v gs =10v ultra-low gate charge( t y pical 1 6 nc) fast s w itchi n g capabili t y 100% a valanche t e sted isolation vo...
Description Silicon N-Channel MOSFET

File Size 457.29K  /  7 Page

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    APT1001R1AVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT1001R1AVR
OCR Text MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JF...1 All Ratings: TC = 25C unless otherwise specified. APT1001R1AVR UNIT Volts Amps 1000 9 36 30...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 1000V 9A 1.100 Ohm

File Size 68.21K  /  4 Page

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    APT1001R1HVR

ADPOW[Advanced Power Technology]
Part No. APT1001R1HVR
OCR Text MOS V (R) TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes t...1 All Ratings: TC = 25C unless otherwise specified. APT1001R1HVR UNIT Volts Amps 1000 9 36 30...
Description POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 66.81K  /  4 Page

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    STT6602

SeCoS Halbleitertechnologie GmbH
Part No. STT6602
OCR Text mos.fet elektronische bauelemente 15-aug-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 6602 top view rohs compliant produ...
Description N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET

File Size 2,986.41K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APT1201R4B APT1201R4S APT1201R4SLL APT1201R4BLL
OCR Text MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switchin...1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = ...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.

File Size 56.70K  /  2 Page

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For mos-1.9a Found Datasheets File :: 415    Search Time::1.891ms    
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