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min-55 Datasheet PDF File

For min-55 Found Datasheets File :: 262895 Search Time::2.344ms
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				GALAXY[Galaxy Power, Inc.]
Part No.	GPEV6-5V0-55-S GPEV6-3V3-40 GPEV6-5V0-55-L
OCR Text	...ondition Var Symbol Requirement Min Max Unit Input Voltage Input Low Line Power-On V No Load Input Power Input Capacitor (external to the...55 A 12.5 mV 12.5 mV 120 mVP-P 120 2.625 2.625 100 120 50 - - 55 70 125 3 mVP-P V V mV %VO S A A Arm...
Description	Gemini Series DC/DC Converter Powers ?00MHz Microprocessors Gemini Series DC/DC Converter Powers ∶600MHz Microprocessors
File Size	103.43K / 8 Page	View it Online	Download Datasheet

				LG Semiconductor
Part No.	GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM76C8128CLE-70 GM76C8128CLE-55 GM76C8128CLI-70
OCR Text	...5.5 v cc + 0.3 0.8 typ 5.0 - - min 4.5 2.2 -0.3* *note :v il (min) = -3.0v for <= 10ns pulse symbol parameter rating unit t a t stg t sol -25 ~ 85 -55 ~ 150 260, 10 (at lead) ambient temperature under bias storage temperature soldering t...
Description	131,072 words x 8 bit CMOS static RAM, 55ns 131,072 words x 8 bit CMOS static RAM, low power, 55ns 131,072 words x 8 bit CMOS static RAM, low power, 85ns 131,072 words x 8 bit CMOS static RAM, 70ns
File Size	104.91K / 11 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BUK78150-55
OCR Text	... C On PCB in Fig.19 Tamb = 25 C MIN. - 55 MAX. 55 55 16 5.5 2.6 1.6 30 8.3 1.8 150 UNIT V V V A A A A W W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN...
Description	CAP,2.2uF,50VDC,10-% Tol,10 % Tol TrenchMOS transistor Standard level FET
File Size	49.86K / 9 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC BSI Brilliance Semiconductor Brilliance Semiconducto...
Part No.	BD616LV4017AC-55 BD616LV4017AC-70 BD616LV4017ACG55 BD616LV4017ACG70 BD616LV4017ACP55 BD616LV4017ACP70 BD616LV4017AI-55 BD616LV4017AI-70 BD616LV4017AIG55 BD616LV4017AIG70 BD616LV4017AIP55 BD616LV4017AIP70 BD616LV4017DC-55 BD616LV4017DC-70 BD616LV4017DCG55 BD616LV4017DCG70 BD616LV4017DCP55 BD616LV4017DCP70 BD616LV4017DI-55 BD616LV4017DI-70 BD616LV4017DIG55 BD616LV4017DIG70 BD616LV4017DIP55 BD616LV4017DIP70 BD616LV4017EC-55 BD616LV4017EC-70 BD616LV4017ECG55 BD616LV4017ECG70 BD616LV4017ECP55 BD616LV4017ECP70 BD616LV4017EI-55 BD616LV4017EI-70 BD616LV4017EIG55 BD616LV4017EIG70 BD616LV4017EIP55 BD616LV4017EIP70 BS616LV4017 BS616LV4017AC BS616LV4017AI BS616LV4017DC BS616LV4017DI BS616LV4017EC BS616LV4017EI
OCR Text	...V Vcc=5.0V Vcc=3.0V Vcc=5.0V MIN. TYP.(1) MAX. -0.5 2.0 2.2 ---2.4 2.4 -----0.8 0.8 Vcc+0.3 UNITS V VIH IIL ILO VOL -- V uA...55 0.5 VOH (5) Output High Voltage Operating Power Supply Current Standby Current-TTL (4) ...
Description	Very Low Power/Voltage CMOS SRAM 256K X 16 bit D-Subminiature Connector; Gender:Male; No. of Contacts:15; Contact Termination:IDC; D Sub Shell Size:DB15; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 非常低功电压CMOS SRAM56 × 16 CONNECTOR ELECTRICAL 非常低功电压CMOS SRAM56 × 16 Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 D-Subminiature Connector; Gender:Male; No. of Contacts:25; Contact Termination:IDC; D Sub Shell Size:DB25; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes D-Subminiature Connector; Gender:Male; No. of Contacts:9; Contact Termination:IDC; D Sub Shell Size:DB9; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes Asynchronous 4M(256Kx16) bits Static RAM
File Size	263.06K / 10 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK9535-55
OCR Text	...b = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 10 34 24 136 85 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MA...
Description	TrenchMOS锛?M锛?ransistor Logic level FET(TrenchMOS锛?M锛??浣???昏??靛钩FET) TrenchMOS transistor Logic level FET TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET) TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
File Size	64.57K / 8 Page	View it Online	Download Datasheet

				Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
Part No.	CY62148-55 CY62148-70 CY62148L-55SC
OCR Text	...f=0 Com'l Test Conditions VCC = Min., IOH = -1 mA VCC = Min., IOL = 2.1 mA 2.2 -0.3 -1 -5 Min. 2.4 0.4 VCC + 0.3 0.8 +1 +5 120 2.2 -0.3 -1 -...55 Parameter READ CYCLE tRC tAA tOHA tACE tDOE tLZOE tHZOE tLZCE tHZCE tPU tPD WRITE CYCLE tWC tSCE ...
Description	512K x 8 Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
File Size	188.43K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9880-55
OCR Text	...5 C On PCB in Fig.2 Tamb = 25 C MIN. - 55 MAX. 55 55 10 7.5 3.5 2.2 40 8.3 1.8 150 UNIT V V V A A A A W W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN...
Description	TrenchMOS transistor Logic level FET
File Size	67.55K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK98150-55
OCR Text	... C On PCB in Fig.19 Tamb = 25 C MIN. - 55 MAX. 55 55 10 5.5 2.6 1.6 30 8.3 1.8 150 UNIT V V V A A A A W W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model (100 pF, 1.5 k) MIN...
Description	TrenchMOS transistor Logic level FET Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
File Size	68.07K / 9 Page	View it Online	Download Datasheet

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