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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text	...rce Voltage 1000 10000 isd , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID , Drain Current (A) 100 1000 10us 10 100 100us 1ms TJ = 25 C 1 10 10ms 0.1 0.2 V ...
Description	Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A? Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型? Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?) Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
File Size	120.60K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...o application note #AN-994. isd 28A, di/dt 460A/s, VDD V(BR)DSS, IRF3710S/L 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , D rain-to-Source Current (A ) D 100 I , D rain-to-S ource C urrent (A ) D...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	... temperature. (See fig. 11) isd 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.70mH Pulse width 400s; duty cycle 2%. RG = 25, IAS = 28A, VGS=10V (See Figure 12) This is a typical value at device destru...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...HIS AREA LIMITED BY R DS(on) isd , Reverse Drain Current (A) 100 TJ = 150 C ID, Drain-to-Source Current (A) 1000 10 100 100sec 1msec TJ = 25 C 1 10 Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... Drain-to-Source Current (A) isd, Reverse Drain Current (A) 100 T J = 25C 1.00 10 T A = 25C 100sec 1msec 10msec 1 10 100 0.10 0.0 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 1.4 Tj = 150C Single Pulse 1 0 VSD, Source-to-Drai...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...ource Current (A) TJ = 175C isd , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 1000 100 100sec 10.0 TJ = 25C 1.0 10 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tc = 25C Tj...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STFN STT5NF30L
OCR Text	...s SOURCE DRAIN DIODE Symbol isd isdM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current isd = 4 A, VGS = 0 isd ...
Description	N-CHANNEL 30V 0.039 OHM 4A SOT23-6L STRIPFET II POWER MOSFET N-CHANNEL 30V - 0.039W - 4A SOT23-6L STripFET II POWER MOSFET
File Size	255.47K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STF40NF06
OCR Text	... A A A W W/C V/ns mJ V C (1) isd 40A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.. (2) Starting Tj=25C, ID=20A, VDD=30V ( ) Pulse width limited by safe operating area Table 4: Thermal Data Rthj-case Tl Thermal Resistance Junction-case ...
Description	N-CHANNEL 60A - 0.024 Ohm - 23A - TO-220 STRIPFET II MOSFET N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET
File Size	197.22K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...o application note #AN-994. isd -38A, di/dt -270A/s, VDD V(BR)DSS, IRF4905S/L 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT OM - 4. 5V TOP 1000 -ID , D ra in -to -S o u rc e C u rre n t (A ) 100 -ID , ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...emperature. ( See fig. 11 ) isd -38A, di/dt -270A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF4905 1000 VGS - 15V - 10V - 8.0V - 7....
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

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