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1326G2 C3202 BYD53U MMBD5817 40309 J0E391MC E2502H59 D2004
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  gma Datasheet PDF File

For gma Found Datasheets File :: 438    Search Time::1.594ms    
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    JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE9112HR4 JE9112HR5 JE9112HSR1 JE9112HSR2 JE9112HSR3 JE9112HSR4 JE9112HSR5

Hongfa Relay
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Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
Part No. JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE9112HR4 JE9112HR5 JE9112HSR1 JE9112HSR2 JE9112HSR3 JE9112HSR4 JE9112HSR5 JE9112HSTR1 JE9112HSTR2 JE9112HSTR3 JE9112HSTR4 JE9112HSTR5 JE9112HTR1 JE9112HTR2 JE9112HTR3 JE9112HTR4 JE9112HTR5 JE9124HR1 JE9124HR2 JE9124HR3 JE9124HR4 JE9124HR5 JE9124HSR1 JE9124HSR2 JE9124HSR3 JE9124HSR4 JE9124HSR5 JE9124HSTR1 JE9124HSTR2 JE9124HSTR3 JE9124HSTR4 JE9124HSTR5 JE9124HTR1 JE9124HTR2 JE9124HTR3 JE9124HTR4 JE9124HTR5 JE9148HR1 JE9148HR2 JE9148HR3 JE9148HR4 JE9148HR5 JE9148HSR1 JE9148HSR2 JE9148HSR3 JE9148HSR4 JE9148HSR5 JE9148HSTR1 JE9148HSTR2 JE9148HSTR3 JE9148HSTR4 JE9148HSTR5 JE9148HTR1 JE9148HTR2 JE9148HTR3 JE9148HTR4 JE9148HTR5 JE915HR1 JE915HR2 JE915HR3 JE915HR4 JE915HR5 JE915HSR1 JE915HSR2 JE915HSR3 JE915HSR4 JE915HSR5 JE915HSTR1 JE915HSTR2 JE915HSTR3 JE915HSTR4 JE915HSTR5 JE915HTR1 JE915HTR2 JE915HTR3 JE915HTR4 JE915HTR5 JE916HR1 JE916HR2 JE916HR3 JE916HR4 JE916HR5 JE916HSR1 JE916HSR2 JE916HSR3 JE916HSR4 JE916HSR5 JE916HSTR1 JE916HSTR2 JE916HSTR3 JE916HSTR4 JE916HSTR5 JE916HTR1 JE916HTR2 JE916HTR3 JE916HTR4 JE916HTR5 JE919HR1 JE919HR2 JE919HR3 JE919HR4 JE919HR5 JE919HSR1 JE919HSR2 JE919HSR3 JE919HSR4 JE919HSR5 JE919HSTR1 JE919HSTR2 JE919HST
OCR Text gma /[^mp^^g \hbe Zg] \hgmZ\ml0 Gbe^ Nh3?F6889=6 h I^Zor ehZ] ni mh 6:555VB h Fgobkhgf^gmZe _kb^g]er ikh]n\m /RhIS \hfiebZgm0 h Onmebg^ Ebf^glbhgl? /8=35 q 8535 q 6;350 ff Gbe^ Nh3?DQD57556556>:5 :EDI8:I ;8I8 DhgmZ\m ZkkZg^f^gm...
Description Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电
2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电
HIGH POWER LATCHING RELAY 大功率磁保持继电
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA
SOIC socket added to Adapter Module

File Size 128.07K  /  5 Page

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...0 mA IC 6.0 Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 20 10V dB Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB 3V G 16 G 12 5V 10 14 2V 8 12 6 10 1V 4 8 0.7V 3V 2V 1V 2...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

File Size 76.23K  /  8 Page

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...3.5 4.0 mA 5.0 IC Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 dB 16 10V 3V 2V Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB 13 10V 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V 9 ...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

File Size 56.55K  /  7 Page

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 15.5 10 13 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

File Size 53.54K  /  6 Page

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text ... 17 VCB IC Power Gain gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 24 10V dB 5V Power Gain gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 18 dB 10V 5V 3V 20 3V 14 12 G 2V G 18 2V 10 8 16 1V 1V ...
Description NPN Silicon RF Transistor

File Size 77.16K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 16.5 11 14 - IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

File Size 58.40K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 17 11 14.5 - IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 59.61K  /  7 Page

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 15 9.5 12.5 - IC = 15 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

File Size 53.84K  /  6 Page

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    BFT92 Q62702-F1062 BFT92Q62702-F1062

SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Part No. BFT92 Q62702-F1062 BFT92Q62702-F1062
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 11.5 6 13.5 8 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(k2-1)...
Description PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND

File Size 59.52K  /  7 Page

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For gma Found Datasheets File :: 438    Search Time::1.594ms    
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