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  gate-igbt Datasheet PDF File

For gate-igbt Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HCPL-T250

Agilent(Hewlett-Packard)
Part No. HCPL-T250
Description 1.5 Amp Output Current IGBT Gate Drive Optocoupler(1.5 Amp 输出电流IGBT门驱动光耦合
1.5 Amp Output Current IGBT Gate Drive Optocoupler(1.5 Amp 杈???垫?IGBT?ㄩ┍?ㄥ??????

File Size 161.71K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT50J325
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

File Size 168.29K  /  7 Page

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    Agilent / Hewlett-Packard
Part No. HCPL-3101 HCPL-3100
Description Power MOSFET/IGBT Gate Drive Optocouplers(功率 MOSFET/IGBT门驱动耦合 功率MOSFET / IGBT栅极驱动光电耦合器(功率MOSFET IGBT的门驱动耦合器)
Power MOSFET-IGBT Gate Drive Optocouplers

File Size 256.32K  /  12 Page

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    IRG4PC50U IRG4PC50U-E

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4PC50U IRG4PC50U-E
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)

File Size 146.22K  /  8 Page

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    IRG4PC40 IRG4PC40F IRG4PC40F-EPBF

IRF[International Rectifier]
Vishay Intertechnology, Inc.
Part No. IRG4PC40 IRG4PC40F IRG4PC40F-EPBF
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN

File Size 144.13K  /  8 Page

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    IRG4PC40U IRG4PC40U-EPBF

Vishay Intertechnology, Inc.
International Rectifier
Part No. IRG4PC40U IRG4PC40U-EPBF
Description 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)

File Size 146.79K  /  8 Page

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    APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG

Microsemi, Corp.
Microsemi Corporation
Part No. APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies

File Size 145.42K  /  6 Page

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    HCPL3180 HCPL-3180 HCPL-3180-060 HCPL-3180-300 HCPL-3180-500

HP[Agilent(Hewlett-Packard)]
Part No. HCPL3180 HCPL-3180 HCPL-3180-060 HCPL-3180-300 HCPL-3180-500
Description From old datasheet system
Current High Speed IGBT/MOSFET Gate Drive Optocoupler
Current, High Speed IGBT/MOSFET Gate Drive Optocoupler

File Size 444.43K  /  19 Page

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    IRG4PC50UD IRG4PC50UD-E

IRF[International Rectifier]
Part No. IRG4PC50UD IRG4PC50UD-E
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package

File Size 212.73K  /  10 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT90AM-18
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR

File Size 22.58K  /  2 Page

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