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				ONSEMI[ON Semiconductor]
Part No.	NL17SZ17DFT2 NL17SZ17DFT2G NL17SZ17XV5T2 NL17SZ1 NL17SZ17
OCR Text	...vice performs much as LCX multi-gate products in speed and drive. Features http://onsemi.com MARKING DIAGRAMS 5 1 SOT-353/SC70-5/SC-88A DF...EMITTER 1/2 BASE 2 COLLECTOR 2 COLLECTOR 1 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 ...
Description	Single Buffer, Schmitt Single Non-Inverting Buffer with Schmitt Trigger
File Size	59.71K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to...Emitter Collector * Source terminals are shorted internally. Current handling capability is equa...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to...Emitter Gate Collector Emitter 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.5...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50GF120B2R APT50GF120LR
OCR Text	...00 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage gate-emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current 1 1 ...
Description	The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代 Fast IGBT 1200V 80A
File Size	37.28K / 3 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...00 RY A IN MIN Collector-Gate Voltage (RGE = 20K) gate-emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 ...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...00 RY A IN MIN Collector-Gate Voltage (RGE = 20K) gate-emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 ...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	...J Watts Amps Volts Collector-Gate Voltage (RGE = 20KW) gate-emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current 1 @ TC = 25C RBSOA Clamped Inductive Load Current...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50GF60HR
OCR Text	... APT50GF60HR UNIT Collector-Gate Voltage (RGE = 20KW) gate-emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W...
Description	Fast IGBT 600V 55A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	25.29K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50M50JLC APT5010JLC
OCR Text	gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to...Emitter Collector * Source terminals are shorted internally. Current handling capability is equa...
Description	POWER MOS VI 500V 77A 0.050 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8024B2VFR APT8024LVFR APT50M85B2VFR APT50M85LVFR
OCR Text	...tching speeds through optimized gate layout. T-MAXTM TO-264 LVFR * Identical Specifications: T-MAXTM or TO-264 Package * Lower L...Emitter Gate Collector Emitter 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.5...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 33A 0.240 Ohm
File Size	39.43K / 2 Page	View it Online	Download Datasheet

For gate-emitter Found Datasheets File :: 12143 Search Time::1.359ms
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