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For gate- Found Datasheets File :: 106741 Search Time::1.468ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ............................................................................... 900V rDS (ON) (MAX) ............................................................
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ............................................................................... 900V rDS (ON) (MAX) ............................................................
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-5
OCR Text	... 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ................................................................................ 250V rDS (ON) (MAX) ...........................................................
Description	HIGH-SPEED SWITCHING USE
File Size	44.05K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...ent Peak Diode Forward Current gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 1200 ...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3564
OCR Text	...e voltage v dss 900 v drain-gate voltage (r gs = 20 k ) v dgr 900 v gate-source voltage v gss 30 v dc (note 1) i d 3 drain current pulse (t = 1 ms) (note 1) i dp 9 a drain power dissipation (tc = 25c) p d 40 ...
Description	Search --To 2SK3564
File Size	277.53K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	ISL9N303AS3STL86Z
OCR Text	...fet technology and features low gate charge while maintaining low on-resistance. optimized for switching applications, this device improves the overall efficiency of dc/dc converters and allows operation to higher switching fr equencies. ap...
Description	75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
File Size	189.47K / 11 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	K3563
OCR Text	... age v dss 5 0 0 v drain-gate voltag e (r gs = 20 k ? ) v dgr 5 0 0 v gate-sou rce voltage v gss 3 0 v dc (note 1 ) i d 5 drain current pulse (t = 1 ms) (note 1 ) i dp 20 a drain po w e r dissip...
Description	Search --To 2SK3563
File Size	217.70K / 3 Page	View it Online	Download Datasheet

For gate- Found Datasheets File :: 106741 Search Time::1.468ms
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