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For ear-phone Found Datasheets File :: 559    Search Time::1.25ms    
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    APT50M38JLL

Advanced Power Technology
Part No. APT50M38JLL
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Pow...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 51.38K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Pow...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JLC APT5010JLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT50M50JLC APT5010JLC
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter SO ISOTOP (R) 2 T- 27 "UL Recognized" * Lower Input Capacitance * Easier T...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * 100% Avalanche Tested FREDFET D G S * Popular SOT-227 Pac...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrost...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ra...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrost...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Increased Power Dissipation * Easier To Drive * Popular TO-264 M...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50L2LL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2LL
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage TO-264 Max * Increased Power Dissipation * Easier To Drive * Po...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 50.41K  /  2 Page

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    APT50M50 APT50M50PVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50 APT50M50PVR
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ra...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrost...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 74.5A 0.050 Ohm

File Size 35.96K  /  2 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Faster Switching * 100% Avalanche Tested G D S All Rat...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DY...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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    APT50M60L2VR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VR
OCR Text ... IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter * 100% Avalanche Tested G D S All Ratings: TC = 25C unless otherwise specifie...Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 05...
Description POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 33.79K  /  2 Page

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For ear-phone Found Datasheets File :: 559    Search Time::1.25ms    
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