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dl-41 Datasheet PDF File

For dl-41 Found Datasheets File :: 2442 Search Time::1.469ms
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				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) 480 8.6 THERMAL CHARACT...41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15...
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020 APT5020SVR
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Sy...41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.55...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	61.79K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024SVR
OCR Text	...covery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol R JC RJA Characteristic Junction to Case EL MAX ...41 (.528) 13.51 (.532) 3 Revised 4/18/95 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.02...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	32.19K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5028SVR
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Sy...41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.55...
Description	POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	64.83K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50 APT50M50PVR
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS ...41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 28.70 (1.130) 28.45 (1.120) 3.43 (.135) 2.92...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
File Size	35.96K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8043BLL APT8043SLL
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) Peak Diode Recovery dv/ dt 5 ...41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.49K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Peak Diode Recovery dv/dt 5 AL IC HN EC ION TT CE MA AN OR DV NF A I VDD = 0.5 VDSS R...41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.71K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	...Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Sy...41 (.528) 13.51 (.532) 3 1.04 (.041) 1.15 (.045) Revised 4/18/95 13.79 (.543) 13.99 (.55...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CS80C86 CS80C86-2 CD80C86 CD80C86-2 MD80C86 MD80C86-2 MD80C86-2B MD80C86B IP80C86-2 80C86 8405202XA 8405202QA 8405201QA 8405201XA LP80C86 FN2957 CP80C86 CP80C86-2 LS80C86 ID80C86 ID80C86-2 IS80C86-2 MR80C86 MR80C86-2 MR80C86-2B MR80C86B
OCR Text	...UNIT DH SP BP SI DI AL BL CL DL ARITHMETIC/ LOGIC UNIT FLAGS 3-143 80C86 Pin Description The following pin function descript...41) NOTES: 7. Signal at 82C84A shown for reference only. 8. Setup requirement for asynchronous signa...
Description	CMOS 16-Bit Microprocessor From old datasheet system
File Size	337.74K / 35 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	GTL2000 GTL2000DL GTL2000_2
OCR Text	...E 0C to +85C ORDER CODE GTL2000 DL DWG NUMBER SOT370-1 2000 Jan 25 2 853-2154 23030 Philips Semiconductors Product specification 22-bit GTL processor voltage clamp GTL2000 PIN DESCRIPTION PIN NUMBER 1 2 3 - 24 25 - ...
Description	From old datasheet system 22-bit GTL processor voltage clamp
File Size	55.25K / 6 Page	View it Online	Download Datasheet

For dl-41 Found Datasheets File :: 2442 Search Time::1.469ms
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