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  diode.0a Datasheet PDF File

For diode.0a Found Datasheets File :: 11398    Search Time::1.671ms    
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    HFA15TB60 HFA15TB60-1

International Rectifier
Part No. HFA15TB60 HFA15TB60-1
OCR Text ...nd emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count f...0a, di f /dt = 200a/s, v r = 30v t rr1 42 60 ns t j = 25c t rr2 74 120 t j = 125c i f = 15a i rr...
Description 600V 15A HEXFRED Discrete Diode in a TO-220AC package
600V 15A HEXFRED Discrete Diode in a TO-262 package

File Size 220.48K  /  6 Page

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    Infineon Technologies
Part No. K25N120
OCR Text ...t recovery anti-parallel emcon diode ? 40lower e off compared to previous generation ? short circuit withstand time ? ...0a 20a 40a 60a 80a 1 00 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a ...
Description Fast IGBT in NPT-technology

File Size 392.52K  /  13 Page

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    IRLU3410PBF

International Rectifier
Part No. IRLU3410PBF
OCR Text ...he energy 7.9 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range so...0a v gs(th) gate threshold voltage 1.0 ??? 2.0 v v ds = v gs , i d = 250a g fs forward transcon...
Description Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  

File Size 283.97K  /  11 Page

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    IRG4BC20MD-SPBF

International Rectifier
Part No. IRG4BC20MD-SPBF
OCR Text diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.85v @v ge = 15v, i c = 11a parameter min. typ. max. units r...0a see fig. 13 ---- 1.3 1.6 i c = 8.0a, t j = 150c i ges gate-to-emitter leakage current ...
Description 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD

File Size 293.27K  /  12 Page

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    RCD040N25

Rohm
Part No. RCD040N25
OCR Text ...meter type source current (body diode) drain current parameter *2 *2 (1) gate (2) drain (3) source ? 1 body diode cpt3 (sc-63) <sot-428> 6.5...0a i d =4.0a 3/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. d...
Description Drive Nch MOSFET

File Size 1,131.62K  /  7 Page

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    RCD040N25

Rohm
Part No. RCD040N25
OCR Text ...meter type source current (body diode) drain current parameter *2 *2 (1) gate (2) drain (3) source ? 1 body diode cpt3 (sc-63) <sot-428> 6.5...0a i d =4.0a 3/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. d...
Description 10V Drive Nch MOSFET

File Size 1,078.83K  /  7 Page

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    JANSR2N7390U JANSF2N7390U IRHE9230 IRHE93230 IRHE9230-15

International Rectifier
Part No. JANSR2N7390U JANSF2N7390U IRHE9230 IRHE93230 IRHE9230-15
OCR Text ...he energy ? 2.5 mj dv/dt p eak diode recovery dv/dt ? -27 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. m...0a jansr2n7390u irhe93230 300k rads (si) 0.80 ? -4.0a jansf2n7390u features: single event ef...
Description -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
Simple Drive Requirements

File Size 120.55K  /  8 Page

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    HFH7N80

SemiHow Co.,Ltd.
Part No. HFH7N80
OCR Text ... (note 1) 19.8 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 ) - d...0a , v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 7.0a , di /dt 200a/ s , v dd bv dss , st...
Description 800V N-Channel MOSFET

File Size 1,148.27K  /  8 Page

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For diode.0a Found Datasheets File :: 11398    Search Time::1.671ms    
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