| |
|
 |
Shenzhen Winsemi Microelectronics Co., Ltd
|
| Part No. |
STF12A60
|
| OCR Text |
...i ri ri s s s s t t t t i i i i cs cs cs cs s s s s y y y y m m m m bol bol bol bol p p p p a a a a r r r r ame ame ame ame t t t t e e e e ...te t r igge r c u rr en t (c on t inuou s dc ) (v d = 6 v dc , rl = 1 0 o hm s ) t 2 + g + t 2 + g -... |
| Description |
Bi-Directional Triode Thyristor
|
| File Size |
366.90K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| Part No. |
WBR13003D1
|
| OCR Text |
...i i i i s s s s t t t t i i i i cs cs cs cs ( ( ( ( t t t t c c c c = = = = 2 2 2 2 5 5 5 5 c c c c ) ) ) ) s y mbo l p a r a m e t e r t e...te te te te : : : : p u l se t e s t : p u l se w i d t h 300, d u t y c y c l e 2%
wb wb wb wb r ... |
| Description |
High Voltage Fast-Switching NPN Power Transistor
|
| File Size |
267.33K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| Part No. |
WBR13003D
|
| OCR Text |
...i ri ri s s s s t t t t i i i i cs cs cs cs s y mbo l p a r a m e t e r v a l u e u ni ts r q jc t h erm a l r e s i s t an c e , j u n c t ...te te te te : : : : p u l se t e s t : p u l se w i d t h 300, d u t y c y c l e 2%
wb wb wb wb r ... |
| Description |
High Voltage Fast-Switching NPN Power Transistor
|
| File Size |
353.29K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADESTO
|
| Part No. |
AT25DN512C
|
| OCR Text |
...function as serte d st ate type cs chip select : asserti ng th e cs pin selects the device. when the cs pi n is d easserted, the d e vi...te rn all y sel f -timed op eration such as a prog ram or erase cycl e , the de vice will n o... |
| Description |
512-Kbit 2.3V Minimum SPI Serial Flash Memory
|
| File Size |
1,341.45K /
40 Page |
View
it Online |
Download Datasheet |
| |
|
|
Integrated Device Technology, Inc.
|
| Part No. |
IDT71V2577 IDT71V2579 IDT71V2577S75BG
|
| OCR Text |
...e chip enable input synchronous cs 0 , cs 1 chip selects input synchronous oe output enable input asynchronous gw global write enable input...te rm (2) terminal voltage with respect to gnd -0.5 to +4.6 v v te rm (3,6) terminal voltage with re... |
| Description |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 2.5V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
|
| File Size |
522.79K /
23 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
