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150EBU04 PIC18F65 LM358B TC2001 1499682 S7125F 3DU13L LB1272
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    K9F1208U0A K9F1216U0A

SAMSUNG[Samsung semiconductor]
Part No. K9F1208U0A K9F1216U0A
OCR Text ...B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C FLASH MEMORY X8 N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23...
Description 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

File Size 957.56K  /  45 Page

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    K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0
OCR Text ...P WE 2. AC parameter tCLR(cle to RE Delay, min 50ns) is added. 3. AC parameter tAR1 value : 150ns --> 20ns 4. #40 Pin Name : nSE --> GND Note : For more detailed features and specifications including FAQ, please refer to Samsung's ...
Description 512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory

File Size 555.63K  /  27 Page

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    KM29W040AT KM29W040AIT

Samsung semiconductor
Samsung Electronic
Part No. KM29W040AT KM29W040AIT
OCR Text ...SCRIPTION Pin Name I/O0 ~ I/O7 cle Pin Function Data Inputs/Outputs Command Latch Enable Address Latch Enable Chip Enable Read Enable Write Enable Write Protect Ground Input Ready/Busy output Power Ground No Connection VSS cle ALE WE WP...
Description V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory

File Size 357.22K  /  22 Page

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    AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C4008-55TIN

Alliance Semiconductor Corporation
Part No. AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C4008-55TIN
OCR Text ... write c y cle 1 (we# controlled) (1,2,3,5,6) dou t di n data vali d t d w t d h ( 4 ) hig h -z t w h z we# t w p t c w ce # t w r t a s t a w a d d r ess t w c ( 4 ) t ow write c y cle 2 (ce# control...
Description 512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

File Size 2,724.26K  /  15 Page

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    Toshiba
Part No. TC58NVG6D2GTA00
OCR Text ...rite enable re read enable cle command latch enable ale address latch enable wp write protect by / ry ready/busy v cc power supply v ss ground n.c no connection vss nc nc nc i/o8 i/o7 i/o6 i/o5 nc nc vcc v...
Description 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM

File Size 247.10K  /  17 Page

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    TC58V64BDC

TOSHIBA[Toshiba Semiconductor]
Part No. TC58V64BDC
OCR Text ... PIN ASSIGNMENT (TOP VIEW) VSS cle ALE PIN NAMES I/O1 to I/O8 CE WE WP I/O1 I/O2 I/O3 I/O4 VSS VSS I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Ground Inp...
Description 64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia )
64-MBIT (8M  8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)

File Size 341.43K  /  33 Page

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    Toshiba
Part No. TC58NVG5T2HTA00
OCR Text ...rite enable re read enable cle command latch enable ale address latch enable wp write protect by / ry ready/busy v cc power supply v ss ground n.c no connection vss nc nc nc i/o8 i/o7 i/o6 i/o5 nc nc vcc v...
Description 32 GBIT (4G X 8 BIT) CMOS NAND E2PROM

File Size 255.27K  /  18 Page

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    K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16Q0M K9F1G16U0M K9F1G08U0M K9F1G08Q0A K9D1G08V0M
OCR Text ...B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C FLASH MEMORY X8 N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23...
Description 64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 725.13K  /  40 Page

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    K9F1G08Q0A K9F1G08U0A K9F1G08Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0A K9F1G08U0A K9F1G08Q0M
OCR Text ...B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 FLASH MEMORY X8 N.C N.C N.C N.C ...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 673.54K  /  37 Page

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    K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
OCR Text ...B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C X8 N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C cle ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 ...
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata

File Size 712.11K  /  38 Page

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