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area1.5 Datasheet PDF File

For area1.5 Found Datasheets File :: 65 Search Time::1.641ms
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					Infineon Technologies AG
Part No.	IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IPD60R380C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) 260 C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal res...5 epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical w...
Description	10.6 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Metal Oxide Semiconductor Field Effect Transistor
File Size	2,035.33K / 19 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPP60R125C6 IPW60R125C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resista...5 Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R125C6 Electrical characteris...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	2,063.91K / 18 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPW60R099C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resista...5 Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R099C6 Electrical characteris...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	2,067.02K / 18 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPW60R160C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resista...5 Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R160C6 Electrical characteris...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	2,181.37K / 18 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GXT
OCR Text	...min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 - Unit RthJC RthJA RthJA - K/W 100 75 5...5 A - 0.3 0.4 1 Device on 40mm40mm1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick...
Description	SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated 7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
File Size	651.51K / 10 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPA60R520C6 IPP60R520C6 IPD60R520C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) 260 C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal res...5 Rev. 2.0, 2009-09-17 600V CoolMOSTM C6 Power Transistor IPx60R520C6 Electrical characteris...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	1,757.41K / 17 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPA60R600C6 IPP60R600C6 IPB60R600C6 IPD60R600C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) 260 C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal res...5 Rev. 2.0, 2009-08-27 600V CoolMOSTM C6 Power Transistor IPx60R600C6 Electrical characteris...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	1,891.33K / 18 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	IPA60R950C6 IPP60R950C6 IPB60R950C6 IPD60R950C6
OCR Text	...on, device on PCB, 6cm2 cooling area1) 260 C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal res...5 epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical w...
Description	Metal Oxide Semiconductor Field Effect Transistor
File Size	1,895.89K / 18 Page	View it Online	Download Datasheet

					SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BSP170P Q67041-S4018
OCR Text	... min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit Static Characteristics Drain- source ...5 335 105 max. 420 135 S pF Unit Semiconductor Group 3 07 / 1998 BSP 170 P Preliminary ...
Description	SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125 SIPMOS ? Power Transistor From old datasheet system
File Size	151.13K / 9 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	BUZ110SE3045 BUZ110SE3045A BUZ110S
OCR Text	...min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 0.75 62 62 40 K/W Unit RthJC RthJA RthJA - Electrical Character...5.8 max. 26 61.5 130 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 40 V, ID = 80 A Gate to dra...
Description	SIPMOS㈢ Power Transistor SIPMOS? Power Transistor
File Size	123.36K / 8 Page	View it Online	Download Datasheet

For area1.5 Found Datasheets File :: 65 Search Time::1.641ms
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