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  8a p-channel Datasheet PDF File

For 8a p-channel Found Datasheets File :: 4934    Search Time::1.781ms    
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    IRF7303 IRF7303TR

International Rectifier
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Part No. IRF7303 IRF7303TR
OCR Text ... --- --- 1.0 V TJ = 25C, IS = 1.8a, VGS = 0V --- 47 71 ns TJ = 25C, IF = 2.4A --- 56 84 nC di/dt = 100A/s Intrinsic turn-on time is neglig...P UL SE W ID TH TJ = 25C 10 A 1 0.1 1 2 0 s PU L SE W ID TH T J = 1 50 C 10 100 A 1...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7304

International Rectifier
Part No. IRF7304
OCR Text ... --- 0.140 VGS = -2.7V, ID = -1.8a --- --- V VDS = VGS, ID = -250A --- --- S VDS = -16V, ID = -2.2A --- -1.0 VDS = -16V, VGS = 0V A --- -25 ...p-n junction diode. --- --- -1.0 V TJ = 25C, I S = -1.8a, V GS = 0V --- 56 84 ns TJ = 25C, I F = -2....
Description Generation V Technology

File Size 205.83K  /  6 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ...mA --- 0.10 VGS = -10V, ID = -1.8a --- 0.16 VGS = -4.5V, ID = -1.5A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -24V, I D = -1.8a ---...p-n junction diode. S --- --- -1.0 V TJ = 25C, IS = -1.8a, VGS = 0V --- 53 80 ns TJ = 25C, IF = -1....
Description Generation V Technology
-30V Dual p-channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF7307 IRF7307TR

IRF[International Rectifier]
Part No. IRF7307 IRF7307TR
OCR Text ... = -2.2A VGS = -2.7V, I D = -1.8a VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 2.6A VDS = -15V, ID = -2.2A VDS = 16V, V GS...p-channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0, RD = 3.8 ns ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 190.19K  /  10 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ... ID = 2.0A VGS = -10V, ID = -1.8a VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A S VDS = -24V, I...p-channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0, RD = 3.8 ns ...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ...) TOP 250 BOTTOM ID 1.8a 3.3A 4.1A 0.04 200 0.03 150 I D = 6.6A 100 0.02 50 0.01 0 2 4 6 8 A 0 25...P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ... = 1mA 0.029 V GS = 10V, ID = 5.8a 0.046 V GS = 4.5V, ID = 4.7A V V DS = V GS, ID = 250A S V DS = 15V, ID = 5.8a 1.0 V DS = 24V, VGS = ...p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S ...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...5C, L = 35mH RG = 25, IAS = -2.8a. max. junction temperature. ( See fig. 11 ) ISD -2.8a, di/dt 150A/s, VDD V(BR)DSS, TJ 150C ...P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Tr...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7317

IRF[International Rectifier]
Part No. IRF7317
OCR Text ...) TOP 250 BOTTOM ID 1.8a 3.3A 4.1A 0.04 200 0.03 150 I D = 6.6A 100 0.02 50 0.01 0 2 4 6 8 A 0 25...P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D...
Description 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND p-channel, Si, POWER, MOSFET, MS-012AA
HEXFET Power MOSFET

File Size 147.74K  /  10 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ...5C, ID = -1mA VGS = 10V, ID = 5.8a VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, ID = 250A VDS = VGS, ...p-channel ID = -4.9A, VDS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0, RD = 15 ns P-...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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For 8a p-channel Found Datasheets File :: 4934    Search Time::1.781ms    
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