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Advanced Power Technology, Ltd.
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| Part No. |
APTDF100H120
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| OCR Text |
...ry current i f = 100a v r = 800v di/dt = 200a/s t j = 125c 19 a t rr reverse recovery time 210 ns q rr reverse recovery charge 9.4 c i rrm reverse recovery current i f = 100a v r = 800v di/dt=1000a/s ... |
| Description |
Fast Diode Rectifier Bridge Power Module 快速二极管整流桥电源模
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| File Size |
239.28K /
4 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT5N100
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| OCR Text |
...al gate charge v gs =10v, v ds =800v, i d =5a dynamic parameters v ds =5v, i d =250 m a v ds =800v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate ... |
| Description |
1000V,4A N-Channel MOSFET
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| File Size |
392.38K /
6 Page |
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it Online |
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Advanced Power Technology, Ltd.
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| Part No. |
APT50GN120L2DQ2
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| OCR Text |
...ductive switching (25c) v cc = 800v v ge = 15v i c = 50a r g = 2.2 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 50a r g = 2.2 ? 7 t j = +125c characteristic input capacitance output capacitance reverse ... |
| Description |
IGBT IGBT
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| File Size |
224.92K /
9 Page |
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it Online |
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International Rectifier, Corp.
Vishay Semiconductors
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| Part No. |
ST083S08PFM1 ST083S04PFM1 ST083S12PFK0L
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| OCR Text |
...(*) t q = 10 to 20s for 400 to 800v devices t q = 15 to 30s for 1000 to 1200v devices case style to-209ac (to-94)
st083s series 2 www.irf.com bulletin i25185 rev. b 03/94 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm ... |
| Description |
16-Mbit (1M x 16) Static RAM 快速晶闸管135a
THYRISTOR 135A FAST 快速晶闸管135a
Silicon Controlled Rectifier, 135 A, 1200 V, SCR, TO-209AC, TO-209AC, 3 PIN
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| File Size |
126.46K /
9 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...g energy e ts t j =25 c, v cc =800v, i c =15a, v ge =15v/0v, r g =33 ? , energy losses include ?tail? and diode reverse recovery. -1.92.6 mj switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
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| File Size |
415.74K /
12 Page |
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it Online |
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Microsemi, Corp.
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| Part No. |
APT75GN120J
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| OCR Text |
...ductive switching (25c) v cc = 800v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +25c inductive switching (125c) v cc = 800v v ge = 15v i c = 75a r g = 1.0 ? 7 t j = +125c characteristic input capacitance output capacitance reverse ... |
| Description |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
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| File Size |
286.25K /
6 Page |
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it Online |
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Shenzhen Tenand Technology Co., Ltd.
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| Part No. |
MOC3083S-TA1
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| OCR Text |
...off-state voltage v drm : min. 800v * high critical rate of rise of off-state voltage ( dv/dt : min. 800v / m s ) * dual-in-line package : moc3083 * wide lead spacing package : moc3083m * surface mounting package : moc3083s * t... |
| Description |
Property of Lite-on Only
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| File Size |
184.92K /
8 Page |
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it Online |
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