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Mitsubishi Electric Sem...
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| Part No. |
FK20SM-10
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| OCR Text |
... 2 7.0 3 0.28 2.80 10.0 2800 350 55 60 80 270 80 1.5 10 1 4 0.36 3.60 2.0 0.45 150 v (br) dss v (br) gss i gs...200v, i d = 10a, v gs = 10v, r gen = r gs = 50 w i s = 10a, v gs = 0v channel to case i s = 2... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
52.43K /
5 Page |
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it Online |
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Zowie Technology Corpor...
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| Part No. |
AUBYD17ZJH AUBYD17ZDH AUBYD17ZKH AUBYD17ZGH AUBYD17ZMH
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| OCR Text |
... conditions min. typ. v - - - 0.80 0.91 0.93 - - 1.00 max. unit forward voltage (note 1) - 80 - r th(ja) junction to ambient (note 1) therma...200v, g = 400v, j = 600v, k = 800v, m = 100v mounting pad layout 4.0 ref . 1.0 min. 1.50 min. 2.00 m... |
| Description |
Sintered Glass Passivated Rectifier
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| File Size |
51.68K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS18SM-10
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| OCR Text |
... 3 0.30 2.7 10.0 2200 300 45 40 80 200 80 1.5 -- Max. -- -- 10 1 4 0.40 3.6 -- -- -- -- -- -- -- -- 2.0 0.50
Unit V V A mA V V S pF pF p...200V, ID = 9A, VGS = 10V, RGEN = RGS = 50
IS = 9A, VGS = 0V Channel to case
PERFORMANCE CURVES... |
| Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
48.74K /
4 Page |
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it Online |
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