720v pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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720v Datasheet PDF File

For 720v Found Datasheets File :: 430 Search Time::1.609ms
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				IRF[International Rectifier]
Part No.	IRG4PH40K
OCR Text	... motor control, tsc =10s, VCC = 720v , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C ...
Description	1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	154.31K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP5NC90ZFP STB5NC90ZT4
OCR Text	...8ns q g total gate charge v dd =720v,i d = 5a, v gs =10v 40 56 nc q gs gate-source charge 9 nc q gd gate-drain charge 15 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d =5a, r g =4.7 ...
Description	N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
File Size	521.94K / 13 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGBF30F
OCR Text	...= 25C 9.7 -- ns IC = 11A, VCC = 720v 160 280 VGE = 15V, RG = 23 140 240 Energy losses include "tail" 0.33 -- 0.67 -- mJ See Fig. 9, 10, 11, 14 1.0 1.9 27 -- TJ = 150C, 12 -- ns IC = 11A, VCC = 720v 260 -- VGE = 15V, RG = 23 250 -- Energy lo...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	102.65K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	K3699
OCR Text	... dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.85a v gs =10v i d =1.85a v ds =25v v cc =600v i d =1.85a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. m...
Description	Search --To 2SK3699
File Size	135.02K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	SSH6N90A
OCR Text	...A VGS=30V VGS=-30V VDS=900V VDS=720v,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 1560 2030 135 160 54 22 40 99 32 68 11.5 30.9 63 55 90 210 75 89 --nC ns VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=6A, RG=11.5 S...
Description	Advanced Power MOSFET
File Size	259.64K / 7 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HFS6N90
OCR Text	... ? q g total gate charge v ds = 720v, i d = 6.0 a, v gs = 10 v (note 4,5) -- 35 45 nc q gs gate - source charge -- 10 -- nc q gd gate - drain charge -- 13 -- nc switching characteristics source - drain diode maximum ratings and characterist...
Description	900V N-Channel MOSFET
File Size	965.46K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PH20KD
OCR Text	... motor control, tsc =10s, VCC = 720v , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultraf...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.17V，@和VGE \u003d 15V的，集成电路\u003d 5.0a中）
File Size	273.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH20K IRG4PH20
OCR Text	... motor control, tsc =10s, VCC = 720v , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C ...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)
File Size	221.44K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3533-01
OCR Text	... dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =3.5a v gs =10v i d =3.5a v ds =25v v cc =600v i d =3.5a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max....
Description	N-CHANNEL SILICON POWER MOSFET
File Size	116.70K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STU7NB90I STU7NB90
OCR Text	...e test circuit, Figure 3) VDD = 720v, ID = 7.4A, VGS = 10V Min. Typ. 25 12 51 12.5 23.5 72 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720v...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh MOSFET OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMeshMOSFET
File Size	402.17K / 9 Page	View it Online	Download Datasheet

For 720v Found Datasheets File :: 430 Search Time::1.609ms
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