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TNP10P CX1HHT 73D19 50N04 02P40 C6017 10020 LF201
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  645.30 Datasheet PDF File

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    STB5NK50ZT4 STB5NK50Z-1 STP5NK50Z STP5NK50ZFP STD5NK50Z-1 STD5NK50ZT4 STB5NK50Z05

STMicroelectronics
Part No. STB5NK50ZT4 STB5NK50Z-1 STP5NK50Z STP5NK50ZFP STD5NK50Z-1 STD5NK50ZT4 STB5NK50Z05
OCR Text ...0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 ...
Description N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?MOSFET
N-CHANNEL 500V - 1.22惟 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?⑼OSFET
N-CHANNEL 500V - 1.22ヘ - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH⑩MOSFET

File Size 372.77K  /  17 Page

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    SSM3K329R

Toshiba Semiconductor
Part No. SSM3K329R
OCR Text ... mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2) 1 2010-06-10 0.8+0.08 -0.05 SSM3K329R Electrical Characteristics (Ta = 25C) Chara...30 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 1.0 A ID = 1.0 A, VGS = ...
Description Field-Effect Transistor Silicon N-Channel MOS Type

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    SSM3K02T

Toshiba Corporation
Toshiba Semiconductor
Part No. SSM3K02T
OCR Text ...4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature. Marking 3 Equivalent C...30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 1.25 A ID = 1.25 A, VGS = 4 V ID = 1.25 A, VGS ...
Description High Speed Switching Applications
2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-of...30 -20 -15 -10 -8 -0.8 -6 -4 -0.4 IB = -2 mA hFE - IC Ta = 100C (A) -1.2 hFE 100 25 ...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    SSM5H01TU

Toshiba Semiconductor
Part No. SSM5H01TU
OCR Text ...4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited b...30 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 0.7 A ID = 0.7 A, VGS = 10 V ID = 0.7 A, VGS = ...
Description DC-DC Converter

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    2SA205606

Toshiba Semiconductor
Part No. 2SA205606
OCR Text ...s epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/volt...30 V, RL = 30 -IB1 = IB2 = -33 mA Min -50 200 100 Typ. 20 60 250 90 Max -100 -100 5...
Description High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

File Size 145.28K  /  5 Page

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    ST Microelectronics
Part No. P10NK80Z
OCR Text .../dt = 100A/s, VDD=45 V, Tj=150C 645 6.4 20 Test Conditions Min. Typ. Max. 9 36 1.6 Unit A A V ns C A (1)Limited only by maximum temperatu...30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5...
Description Search --To STP10NK80Z

File Size 367.86K  /  14 Page

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    2SA206009

Toshiba Semiconductor
Part No. 2SA206009
OCR Text ...s epoxy, 1.6 mm thick, Cu area: 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/volt...30 V, RL = 30 IB1 = 33 mA,IB2 = 33 mA Min -50 200 100 Typ. 20 60 250 90 Max -100 -10...
Description High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

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    SANYO
Part No. DL-3147-041
OCR Text ...ew DL-3147-041 is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low thresho...30 -- to +60 -10 -- to +85 -40 Unit mW V C C 1 2 3 o2.0 5.6mm o stem Electrical Connecti...
Description Red Laser Diode Index Guided AlGaInP Laser Diode

File Size 50.76K  /  3 Page

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    SANYO
Part No. DL-3147-141 DL-3147-241
OCR Text ...-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low thresho...30 -- to +60 -10 --40 to +85 C C 2 LD 3-o0.450.1 Unit mW V 1 Pin No. 1 2 3 o2.0 5.6...
Description Red Laser Diode Index Guided AlGaInP Laser Diode

File Size 51.74K  /  3 Page

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