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Toshiba Corporation Toshiba Semiconductor
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| Part No. |
SSM3K02T
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| OCR Text |
...4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent C...30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 1.25 A ID = 1.25 A, VGS = 4 V ID = 1.25 A, VGS ... |
| Description |
High Speed Switching Applications 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
216.79K /
5 Page |
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ST Microelectronics
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| Part No. |
P10NK80Z
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| OCR Text |
.../dt = 100A/s, VDD=45 V, Tj=150C 645 6.4 20 Test Conditions Min. Typ. Max. 9 36 1.6 Unit A A V ns C A
(1)Limited only by maximum temperatu...30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5... |
| Description |
Search --To STP10NK80Z
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| File Size |
367.86K /
14 Page |
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SANYO
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| Part No. |
DL-3147-041
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| OCR Text |
...ew
DL-3147-041 is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low thresho...30 -- to +60 -10 -- to +85 -40
Unit mW V C C
1 2 3 o2.0
5.6mm o stem
Electrical Connecti... |
| Description |
Red Laser Diode Index Guided AlGaInP Laser Diode
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| File Size |
50.76K /
3 Page |
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it Online |
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SANYO
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| Part No. |
DL-3147-141 DL-3147-241
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| OCR Text |
...-3147-141(-241) is index guided 645 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low thresho...30 -- to +60 -10 --40 to +85 C C
2 LD
3-o0.450.1
Unit mW V
1
Pin No.
1 2 3 o2.0
5.6... |
| Description |
Red Laser Diode Index Guided AlGaInP Laser Diode
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| File Size |
51.74K /
3 Page |
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it Online |
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