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  600v 450a Datasheet PDF File

For 600v 450a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRF[International Rectifier]
Part No. IRG4BC30U
Description 600v UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

File Size 165.35K  /  8 Page

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    IRG4BC40U

International Rectifier
Part No. IRG4BC40U
Description 600v UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)

File Size 167.36K  /  8 Page

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    IRG4PC50W IRG4PC50WPBF

IRF[International Rectifier]
Part No. IRG4PC50W IRG4PC50WPBF
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

File Size 154.00K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC40W IRG4BC40W-S
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)

File Size 127.47K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC30W
Description 600v Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

File Size 137.40K  /  8 Page

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    STGB3NB60SD STGB3NB60SDT4

ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STGB3NB60SD STGB3NB60SDT4
Description N-CHANNEL 3A - 600v D2PAK Power MESHIGBT N沟道3A 600v的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600v的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600v D2PAK Power MESH IGBT
N-CHANNEL 3A - 600v D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600v D2PAK Power MESH⑩ IGBT

File Size 335.41K  /  8 Page

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. RURD660S9A RURD660 RURD660S RURD660S9ANL
Description 6A/ 600v Ultrafast Diodes
6A, 600v UltraFast Diode 6 A, 600 V, SILICON, RECTIFIER DIODE, TO-252
6A, 600v Ultrafast Diodes

File Size 387.77K  /  5 Page

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    FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
Part No. ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD.-ISL9860PF2 R860PF2 ISL9R860PF2NL
Description 8A, 600v Stealth⑩ Diode
8A 600v Stealth Diode
8A, 600v Stealth Diode 8A条,600v的隐形二极管

File Size 113.22K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1Y40N60B3D
Description TRANSISTOR | IGBT | N-CHAN | 600v V(BR)CES | 40A I(C) | TO-264
70A, 600v, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 122.85K  /  9 Page

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    FCH041N60F

Fairchild Semiconductor
Part No. FCH041N60F
Description N-Channel SuperFETII FRFETMOSFET 600v, 76A, 41m
600v N-Channel MOSFET, FRFET

File Size 324.15K  /  9 Page

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