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324DN 74F378 TPS65862 BAW56LT1 TJA1054U 73U3158N 32012 1N540006
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  6.25a Datasheet PDF File

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    INFINEON[Infineon Technologies AG]
Part No. SKW25N120
OCR Text ... V 2.5 - 3.1 3.7 2.0 3.6 4.3 2.5 5 A 3 1.75 4 VGE(th) ICES I C = 10 0 0 A , VCE=VGE V C E =1200V,V G E =0V T j =2 5 C T...25A IC=12.5A Tj=+150C Tj=+25C Tj=-40C 3V 2V 1V 4V 5V 6V 7V 8V 9V 10...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 333.32K  /  13 Page

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    CXA2006 CXA2006Q

SONY[Sony Corporation]
Part No. CXA2006 CXA2006Q
OCR Text ...CC3 1 2 3 4 5 6 7 8 VSHP CAM/VIDEO -2- LOUTCLP DRVOUT CH/CL PB/REC GND3 PS CXA2006Q Pin Description Pin No. 1 Symbol CAM /VIDEO 25A 25A 68k (VCC1, 2, 3 = 4.75V) Pin voltage Equiva...
Description From old datasheet system
Digital CCD Camera Head Amplifier

File Size 339.86K  /  23 Page

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    PHB153NQ08LT

NXP SEMICONDUCTORS
Part No. PHB153NQ08LT
OCR Text ...n.v. 2004. all rights reserved. 6. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter condition...25a; figure 7 and 8 t j =25 c - 5.2 6.1 m w t j = 175 c - 10.9 12.8 m w v gs = 4.5 v; i d =25a - -...
Description 75 A, 75 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 90.66K  /  13 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIGC42T120CS2 Q67050-A4338-A101
OCR Text ...CE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4338-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possibl...
Description IGBT Chip in NPT-technology

File Size 64.08K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Part No. SIDC23D120F6 Q67050-A4124-A001 Q67050-A4190-A001 SIDC23D120E6
OCR Text ...00V IF 25A Die Size 3.5 x 6.5 mm2 Package sawn on foil Ordering Code Q67050-A4190A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passi...
Description Fast switching diode chip in EMCON-Technology

File Size 242.31K  /  4 Page

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    INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. SGW15N60 SGB15N60 SGP15N60
OCR Text ... G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area ...25A 20A 15A 10A 5A 0A 25C 50C 75C 100C 125C TC, CASE TEMPERATURE Figure 3. Power diss...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology

File Size 411.41K  /  12 Page

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    HFA25TB60PBF

International Rectifier
Part No. HFA25TB60PBF
OCR Text ...verse Recovery Time See Fig. 5, 6 & 16 Peak Recovery Current See Fig. 7& 8 Reverse Recovery Charge See Fig. 9 & 10 Peak Rate of Fall of Reco...25A TJ = 25C TJ = 125C VR = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C Thermal - ...
Description Ultrasfast, Soft Recovery Diode

File Size 193.12K  /  6 Page

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    HFA50PA60CPBF

International Rectifier
Part No. HFA50PA60CPBF
OCR Text ... Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 Min Typ M...25A TJ = 25C TJ = 125C V R = 200V TJ = 25C TJ = 125C dif/dt = 200A/s TJ = 25C TJ = 125C Thermal -...
Description Ultrafast,sSoft Recovery Diode

File Size 228.50K  /  6 Page

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    MAX8655ETN

Maxim Integrated Products
Part No. MAX8655ETN
OCR Text ...STICS (VIN = 12V, VBST - VLX = 6.5V, TA = -40C to +85C, circuit of Figure 4, typical values are at TA = +25C, unless otherwise noted.) (Not...25A, Wide-Input, Internal MOSFET, Step-Down Regulator ELECTRICAL CHARACTERISTICS (continued) (VIN ...
Description Highly Integrated, 25A, Wide-Input Internal MOSFET, Step-Down Regulator

File Size 412.42K  /  24 Page

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    FDPF2710T

Fairchild Semiconductor Corporation
Part No. FDPF2710T
OCR Text ...Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Figure 2. Transfer Characteristics 250 100 150 C o 100 ID,Drain Current...25A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 0 -100 -50 0 50 100...
Description Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
250V N-Channel PowerTrench MOSFET

File Size 490.74K  /  8 Page

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