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				Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
Part No.	DS1104SG27 DS1104SG30 DS1104SG DS1104SG26 DS1104SG28 DS1104SG29 DS1104SG25
OCR Text	...s half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 175oC VR = 0 Max. 16.0 1.28x 106 20.0 2.0 x 106 Units kA A2s kA ...900 Conduction 5 800 Effective thermal resistance Junction to case C/W Double side 0.032...
Description	Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
File Size	94.85K / 7 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	...s half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 8.5 360x 103 10.5 565 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal re...
Description	Rectifier Diode
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-18A FS7KM-18
OCR Text	...D = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 3 2 tw = 10ms POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) 30 10...
Description	HIGH-SPEED SWITCHING USE
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors] Fairchild Semiconductor
Part No.	FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text	...D = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 3 2 tw = 10ms POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) 30 10...
Description	Fairchild Power Switch(FPS) Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.69K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	...RENT (A) 75 D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S q u a re w a ...900 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Cap...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...st Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...ction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 3/25/01 IRF1405 Electrical Characteristic...900 1500 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 5.3 m...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...ction-to-Ambient Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W www.irf.com 1 08/07/02 IRF2204 Electrical Characteristi...900 15V TOP 750 ID 52A 91A 130A EAS , Single Pulse Avalanche Energy (mJ) VDS L D...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... 0.8 0.6 0.4 0.2 0 2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) ...900 CISS 600 0.95 COSS 0.85 300 CRSS 0.75 -60 -40 -20 0 20 40 60...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	...m Junction-to-Lead RJA RJL Max. 50 25 Units C/W C/W TJ, TSTG IS ISM 2.5 50 TA = 25C TL = 90C IDM PD Symbol VDS VGS ID 14.5 14.2 100 2.5 2.4 ...900 350 - - - - - - 22.5 30 100 75 73 19 17 2.7 1.3 4.5 5.8 26 1.8 8 4 16 8 1800 900 60 - - - pF VDS...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

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